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H5PS1G83EFR-C4I

Description
1Gb DDR2 SDRAM
Categorystorage    storage   
File Size851KB,63 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Environmental Compliance
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H5PS1G83EFR-C4I Overview

1Gb DDR2 SDRAM

H5PS1G83EFR-C4I Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSK Hynix
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X11,32
Contacts60
Reach Compliance Codeunknow
ECCN codeEAR99
access modeMULTI BANK PAGE BURST
Maximum access time0.5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)267 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee1
length11.4 mm
memory density1073741824 bi
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals60
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum slew rate0.19 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width8 mm

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Description 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix
Parts packaging code BGA BGA BGA BGA BGA BGA
package instruction TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32
Contacts 60 60 60 60 60 60
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Maximum access time 0.5 ns 0.35 ns 0.45 ns 0.5 ns 0.4 ns 0.45 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 267 MHz 533 MHz 333 MHz 200 MHz 400 MHz 400 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON
interleaved burst length 4,8 4,8 4,8 4,8 4,8 4,8
JESD-30 code R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60
JESD-609 code e1 e1 e1 e1 e1 e1
length 11.4 mm 11.4 mm 11.4 mm 11.4 mm 11.4 mm 11.4 mm
memory density 1073741824 bi 1073741824 bi 1073741824 bi 1073741824 bi 1073741824 bi 1073741824 bi
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1
Number of terminals 60 60 60 60 60 60
word count 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words 134217728 words
character code 128000000 128000000 128000000 128000000 128000000 128000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
organize 128MX8 128MX8 128MX8 128MX8 128MX8 128MX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA
Encapsulate equivalent code BGA60,9X11,32 BGA60,9X11,32 BGA60,9X11,32 BGA60,9X11,32 BGA60,9X11,32 BGA60,9X11,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
power supply 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192 8192 8192
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES YES YES YES
Continuous burst length 4,8 4,8 4,8 4,8 4,8 4,8
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL OTHER OTHER INDUSTRIAL OTHER
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form BALL BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 20 20 20 20 20 20
width 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm
Maximum slew rate 0.19 mA - 0.195 mA 0.19 mA 0.23 mA -

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