H5DU5182EFR-K2C datasheet, PDF

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H5DU5182EFR-K2C: Description512Mb DDR SDRAM; Categorystorage storage; File Size518KB，30 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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H5DU5182EFR-K2C Overview

512Mb DDR SDRAM

H5DU5182EFR-K2C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	BGA
package instruction	VBGA, BGA60,9X12,40/32
Contacts	60
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e1
length	12 mm
memory density	536870912 bi
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	60
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	VBGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)	260
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum standby current	0.005 A
Maximum slew rate	0.24 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	8 mm

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512Mb DDR SDRAM

H5DU5182EFR

H5DU5162EFR

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.0 / Nov. 2009

H5DU5182EFR-K2C Related Products

	H5DU5182EFR-K2C	H5DU5162EFR	H5DU5162EFR-J3C	H5DU5162EFR-K3C	H5DU5162EFR-FAC	H5DU5162EFR-L2C	H5DU5182EFR-E3C	H5DU5182EFR	H5DU5182EFR-J3C	H5DU5182EFR-K3C
Description	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM	512Mb DDR SDRAM
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	conform to	-	conform to	conform to
Maker	SK Hynix	-	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	-	SK Hynix	SK Hynix
Parts packaging code	BGA	-	BGA	BGA	BGA	BGA	BGA	-	BGA	BGA
package instruction	VBGA, BGA60,9X12,40/32	-	VBGA, BGA60,9X12,40/32	VBGA, BGA60,9X12,40/32	VBGA, BGA60,9X12,40/32	VBGA, BGA60,9X12,40/32	VBGA, BGA60,9X12,40/32	-	VBGA, BGA60,9X12,40/32	VBGA, BGA60,9X12,40/32
Contacts	60	-	60	60	60	60	60	-	60	60
Reach Compliance Code	unknow	-	unknow	unknow	unknow	unknow	unknow	-	unknow	unknow
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.75 ns	-	0.7 ns	0.75 ns	0.65 ns	0.75 ns	0.7 ns	-	0.7 ns	0.75 ns
Other features	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	-	166 MHz	133 MHz	250 MHz	100 MHz	200 MHz	-	166 MHz	133 MHz
I/O type	COMMON	-	COMMON	COMMON	COMMON	COMMON	COMMON	-	COMMON	COMMON
interleaved burst length	2,4,8	-	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	-	2,4,8	2,4,8
JESD-30 code	R-PBGA-B60	-	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	-	R-PBGA-B60	R-PBGA-B60
JESD-609 code	e1	-	e1	e1	e1	e1	e1	-	e1	e1
length	12 mm	-	12 mm	12 mm	12 mm	12 mm	12 mm	-	12 mm	12 mm
memory density	536870912 bi	-	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi	-	536870912 bi	536870912 bi
Memory IC Type	DDR DRAM	-	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	-	DDR DRAM	DDR DRAM
memory width	8	-	16	16	16	16	8	-	8	8
Number of functions	1	-	1	1	1	1	1	-	1	1
Number of ports	1	-	1	1	1	1	1	-	1	1
Number of terminals	60	-	60	60	60	60	60	-	60	60
word count	67108864 words	-	33554432 words	33554432 words	33554432 words	33554432 words	67108864 words	-	67108864 words	67108864 words
character code	64000000	-	32000000	32000000	32000000	32000000	64000000	-	64000000	64000000
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	-	70 °C	70 °C	70 °C	70 °C	70 °C	-	70 °C	70 °C
organize	64MX8	-	32MX16	32MX16	32MX16	32MX16	64MX8	-	64MX8	64MX8
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VBGA	-	VBGA	VBGA	VBGA	VBGA	VBGA	-	VBGA	VBGA
Encapsulate equivalent code	BGA60,9X12,40/32	-	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	-	BGA60,9X12,40/32	BGA60,9X12,40/32
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE	-	GRID ARRAY, VERY THIN PROFILE	GRID ARRAY, VERY THIN PROFILE	GRID ARRAY, VERY THIN PROFILE	GRID ARRAY, VERY THIN PROFILE	GRID ARRAY, VERY THIN PROFILE	-	GRID ARRAY, VERY THIN PROFILE	GRID ARRAY, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)	260	-	260	260	260	260	260	-	260	260
power supply	2.5 V	-	2.5 V	2.5 V	2.5 V	2.5 V	2.6 V	-	2.5 V	2.5 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
refresh cycle	8192	-	8192	8192	8192	8192	8192	-	8192	8192
Maximum seat height	1 mm	-	1 mm	1 mm	1 mm	1 mm	1 mm	-	1 mm	1 mm
self refresh	YES	-	YES	YES	YES	YES	YES	-	YES	YES
Continuous burst length	2,4,8	-	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	-	2,4,8	2,4,8
Maximum standby current	0.005 A	-	0.005 A	0.005 A	0.005 A	-	0.005 A	-	0.005 A	0.005 A
Maximum slew rate	0.24 mA	-	0.24 mA	0.24 mA	0.31 mA	-	0.26 mA	-	0.24 mA	0.24 mA
Maximum supply voltage (Vsup)	2.7 V	-	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	-	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	-	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	-	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	-	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	-	2.5 V	2.5 V
surface mount	YES	-	YES	YES	YES	YES	YES	-	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	-	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	-	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal form	BALL	-	BALL	BALL	BALL	BALL	BALL	-	BALL	BALL
Terminal pitch	1 mm	-	1 mm	1 mm	1 mm	1 mm	1 mm	-	1 mm	1 mm
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	20	-	20	20	20	20	20	-	20	20
width	8 mm	-	8 mm	8 mm	8 mm	8 mm	8 mm	-	8 mm	8 mm

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