Compact Technology
FS1A thru FS1M
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Ampere
SURFACE MOUNT
FAST RECOVERY RECTIFIERS
SMAE
FEATURES
Plastic passivated Junction
For surface mounted applications
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
H
Cathode Band
J
A
C
E
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
DIM
A
B
C
D
E
G
H
J
D
B
G
DIMENSIONS
INCHES
MIN
.081
.059
.002
--
.030
.189
.159
.094
MM
MIN
2.05
1.50
0.05
---
0.76
4.80
4.05
2.40
MAX
.089
.075
.010
.008
.052
.209
.167
.102
MAX
2.25
1.90
0.25
.20
1.32
5.30
4.25
2.60
NOTE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
FS1A
50
35
50
FS1B
100
70
100
FS1D
200
140
200
FS1G
400
280
400
1.0
30
1.3
5.0
100
10
30
FS1J
600
420
600
FS1K
800
560
800
FS1M
1000
700
1000
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
0JL
@T
L
=90 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
A
V
uA
pF
C/W
@T
J
=25 C
@T
J
=125 C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note 2)
Maximum Reverse Recovery Time (Note 3)
Operating Temperature Range
Storage Temperature Range
T
RR
T
J
T
STG
150
-55 to +150
-55 to +150
250
500
ns
C
C
NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance Junction to Lead.
3. Measured with :IF=0.5A, IR=1.0A, IRR=0.25A
CTC0170 Ver. 1.0
1
of 2
FS1A thru FS1M
Compact Technology
FS1A thru FS1M
RATNG AND CHARACTERISTIC CURVES
AVERAGE FORWARD
RECTIFIED CURRENT
AMPERES
1.6
1.4
1.2
1.0
.8
.6
.4
.2
0
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315x0.315" (8.0x8.0mm)
PADAREAS
CAPACITANCE, pF
10
T
J
=25 C
O
20
40
60
80
100
120
O
140
160
180
1
1
10
100
LEAD TEMPERATURE , C
REVERSE VOLTAGE ,Vdc
FIG . 1- FORWARD CURRENT DERATING CURVE
FIG. 2- TYPICAL JUNCTION CAPACITANCE
INSTANTANEOUS FORWARD CURRENT, AMPERES
10
PEAK FORWARD SURGE CURRENT,
AMPERES
30
25
20
15
10
5
1
2
5
10
20
50
100
PULSE WIDTH=300uS
1% DUTY CYCLE
1
O
8.3ms SINGLE HALF SINE WAVE
JEDECIVETHOD
T
J
=25 C
0.1
0.01
0.2
0.4
0.6
0.8 1.0
1.2
1.4
1.6
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG . 3- PEAK FORWARD SURGE CURRENT
FIG.4-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
Noninductive
10
Noninductive
t
rr
+0.5A
0
-0.25
[+]
25Vdc
(approx)
(-)
D.U.T
Non
Inductive
1
PULSE
GENERATOR
NOTE2
OSCILLOSCOPE
NOTE 1
NOTE:1.Rise TIME=7ns max
Input Impedance = 1 megohm. 22 pF
2.Rise Time = 10ns max
Source Impedance = 50Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 5 - REVERSE FRCOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
CTC0170 Ver. 1.0
2
of 2
FS1A thru FS1M
RF/Wirelessly
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