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CRS01(TE85R)

Description
DIODE 1 A, 30 V, SILICON, SIGNAL DIODE, S-FLAT-2, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size176KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

CRS01(TE85R) Overview

DIODE 1 A, 30 V, SILICON, SIGNAL DIODE, S-FLAT-2, Signal Diode

CRS01(TE85R) Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionS-FLAT-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.37 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current20 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
CRS01
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS01
High Speed Rectifier Applications
Low forward voltage: V
FM
= 0.37 V @ I
FM
= 0.7 A
Average forward current: I
F (AV)
= 1.0 A
Repetitive peak reverse voltage: V
RRM
= 30 V
Suitable for compact assembly due to small surface-mount package
“S−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Rating
30
1.0 (Note 1)
20 (50 Hz)
22 (60 Hz)
−40~125
−40~150
Unit
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
3-2A1A
Note 1: Tℓ
=
98°C: Rectangular waveform (α
=
180°), V
R
=
15 V
Note 2: Using continuously under heavy loads (e.g. the application of
Weight: 0.013 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Repetitive peak reverse current
Junction capacitance
I
RRM
C
j
Test Condition
I
FM
=
0.1 A
I
FM
=
0.7 A
I
FM
=
1.0 A
V
RRM
=
30 V
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(soldering land: 2 mm
×
2 mm)
Thermal resistance (junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
×
6 mm)
Typ.
0.25
0.33
0.36
40.0
Max
0.37
1.5
70
°C/W
140
20
°C/W
mA
pF
V
Unit
Thermal resistance (junction to lead)
R
th (j-ℓ)
1
2006-11-13

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