NDS9942/L99Z datasheet, PDF - EEWORLD Datasheet

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NDS9942/L99Z: Description3000mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET; CategoryDiscrete semiconductor The transistor; File Size238KB，8 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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NDS9942/L99Z Overview

3000mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET

NDS9942/L99Z Parametric

Parameter Name	Attribute value
Maker	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	0.125 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL AND P-CHANNEL
Maximum power consumption environment	2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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	NDS9942/L99Z	NDS9942	NDS9942/L86Z	NDS9942/S62Z	NDS9942/D84Z
Description	3000mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET	3A, 20V, 0.125ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET	3A, 20V, 0.125ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET	3000mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET	3A, 20V, 0.125ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V	20 V	20 V	20 V	20 V
Maximum drain current (ID)	3 A	3 A	3 A	3 A	3 A
Maximum drain-source on-resistance	0.125 Ω	0.125 Ω	0.125 Ω	0.125 Ω	0.125 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Number of components	2	2	2	2	2
Number of terminals	8	8	8	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Is Samacsys	-	N	N	N	-
Maximum pulsed drain current (IDM)	-	10 A	10 A	-	10 A
Maximum off time (toff)	-	100 ns	100 ns	-	100 ns
Maximum opening time (tons)	-	35 ns	35 ns	-	35 ns
Base Number Matches	-	1	1	1	-

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