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NE68839R-T1

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, C Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size459KB,10 Pages
ManufacturerCalifornia Eastern Labs
Websitehttp://www.cel.com/
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NE68839R-T1 Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, C Band, Silicon, NPN

NE68839R-T1 Parametric

Parameter NameAttribute value
MakerCalifornia Eastern Labs
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-based maximum capacity0.8 pF
Collector-emitter maximum voltage6 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
highest frequency bandC BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9000 MHz
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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