7-Segment LED-Chip
Preliminary
Radiation
Red
1000
EDC-660-19-01
6/22/2007
Type
Diffusion type
Technology
GaAsP/GaAs
rev. 05/07
Electrodes
P (anode) up
typ. dimensions (µm)
30
425
typ. thickness
330 µm
cathode
1130
Application
This miniature device is an
excellent choice for
applications where small
size and reduced space
are important factors such
as complex displays in
optical devices for
laboratory, measurement,
control- and medical
equipment.
Au-alloy metalization
anode
Al metalization
Miscellaneous Parameters
T
amb
= 25° unless otherwise specified
C,
Parameter
Temperature coefficient of
λ
C
Operating temperature range
Storage temperature range
Test
сonditions
T
a
= -40..120°
C
Symbol
T
C
(λ
C
)
T
amb
T
stg
Value
0.15
-30 to +100
-40 to +125
Unit
nm/K
°
C
°
C
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
1
I
F
= 5 mA
Forward voltage
Forward voltage
Reverse voltage
Luminous intensity/segment
2
Luminous intensity/segment
2
Luminous intensity/segment
3
I
V
ratio segment to segment
2
I
V
ratio to adjacent chip
Peak wavelength
Spectral bandwidth at 50%
1
2
Symbol
V
F
V
F
V
R
I
v
I
v
I
v
Min
Typ
1.7
1.8
Max
1.9
2.1
Unit
V
V
V
I
F
= 20 mA
I
R
= 100 µA
I
F
= 5 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
5
60
280
85
400
710
1.75
2.00
µcd
µcd
µcd
λ
p
∆λ
0.5
650
660
17
670
nm
nm
Current for one segment
Measured on bare chip on TO-18 header
3
Measured on epoxy covered chip on TO-18 header
Labeling
Type
EDC-660-19-01
Lot N°
I
V
(typ) [µcd]
V
F
(typ) [V]
Quantity
Packing:
Chips in wafer pack or on adhesive film with wire-bond side on top
*Note: All measurements carried out with
EPIGAP
equipment
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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