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MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2209
Preferred Device
Silicon Tuning Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid−state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
Features
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•
•
•
•
•
6.8−100 pF, 30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
Cathode
SOT−23
2
Cathode
1
Anode
1
Anode
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance − 10%
Complete Typical Design Curves
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Forward Power Dissipation
@ T
A
= 25°C
MMBV21xx
Derate above 25°C
@ T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
MV21xx
LV2209
T
J
T
stg
Symbol
V
R
I
F
P
D
225
1.8
280
2.8
+150
−55 to +150
mW
mW/°C
mW
mW/°C
°C
°C
Value
30
200
Unit
Vdc
mAdc
1
2
3
TO−92
MARKING
DIAGRAMS
SOT−23 (TO−236)
CASE 318−08
STYLE 8
xxx M
G
G
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
xxx = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
mAdc)
MMBV21xx, MV21xx
LV2209
Reverse Voltage Leakage Current
(V
R
= 25 Vdc, T
A
= 25°C)
Diode Capacitance Temperature Co-
efficient (V
R
= 4.0 Vdc, f = 1.0 MHz)
Symbol
V
(BR)R
30
25
I
R
TC
C
−
−
−
−
−
280
−
−
0.1
−
mAdc
ppm/°C
Min
Typ
Max
Unit
Vdc
1
2
TO−92 (TO−226AC)
CASE 182
STYLE 1
yy
yyyy
AYWW
G
G
yyyyyy = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 4
Publication Order Number:
MMBV2101LT1/D
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
C
T
, Diode Capacitance
V
R
= 4.0 Vdc, f = 1.0 MHz
pF
Device
MMBV2101LT1
MMBV2101LT1G
MMBV2101L
MV2101
MV2101G
MMBV2103LT1
MMBV2105LT1
MMBV2105LT1G
MMBV2105L
MV2105
MV2105G
MMBV2107LT1
MMBV2107LT1G
MMBV2107L
MMBV2108LT1
MMBV2108LT1G
LV2209
MMBV2109LT1
MMBV2109LT1G
MMBV2109L
MV2109
MV2109G
Marking
M4G
M4G
M4G
MV2101
MV2101
4H
4U
4U
4U
MV2105
MV2105
4W
4W
4W
4X
4X
LV2209
4J
4J
4J
MV2109
MV2109
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
TO−92
TO−92
(Pb−Free)
SOT−23
SOT−23
SOT−23
(Pb−Free)
SOT−23
TO−92
TO−92
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
SOT−23
SOT−23
SOT−23
(Pb−Free)
TO−92
SOT−23
SOT−23
(Pb−Free)
SOT−23
TO−92
TO−92
(Pb−Free)
Shipping
†
3,000 / Tape & Reel
3,000 / Tape & Reel
Bulk (Note 1)
1,000 per Box
1,000 per Box
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
Bulk (Note 1)
1,000 per Box
1,000 per Box
3,000 / Tape & Reel
3,000 / Tape & Reel
Bulk (Note 1)
3,000 / Tape & Reel
3,000 / Tape & Reel
1,000 per Box
3,000 / Tape & Reel
3,000 / Tape & Reel
Bulk (Note 1)
1,000 per Box
1,000 per Box
Min
6.1
6.1
6.1
6.1
6.1
9.0
13.5
13.5
13.5
13.5
13.5
19.8
19.8
19.8
24.3
24.3
29.7
29.7
29.7
29.7
29.7
29.7
Nom
6.8
6.8
6.8
6.8
6.8
10
15
15
15
15
15
22
22
22
27
27
33
33
33
33
33
33
Max
7.5
7.5
7.5
7.5
7.5
11
16.5
16.5
16.5
16.5
16.5
24.2
24.2
24.2
29.7
29.7
36.3
36.3
36.3
36.3
36.3
36.3
Q, Figure of Merit
V
R
= 4.0 Vdc,
f = 50 MHz
Typ
450
450
450
450
450
400
400
400
400
400
400
350
350
350
300
300
200
200
200
200
200
200
TR, Tuning Ratio
C
2
/C
30
f = 1.0 MHz
Min
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Typ
2.7
2.7
2.7
2.7
2.7
2.9
2.9
2.9
2.9
2.9
2.9
2.9
2.9
2.9
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
Max
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
1.
MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1,
are also available in bulk. Use the device title and drop the “T1”
suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. C
T
, DIODE CAPACITANCE
(C
T
= C
C
+ C
J
). C
T
is measured at 1.0 MHz using a capacitance
bridge (Boonton Electronics Model 75A or equivalent).
2. TR, TUNING RATIO
(Boonton Electronics Model 33AS8 or equivalent). Use Lead
Length
[
1/16″.
4. TC
C
, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TR is the ratio of C
T
measured at 2.0 Vdc divided by C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
TC
C
is guaranteed by comparing C
T
at V
R
= 4.0 Vdc, f = 1.0
MHz, T
A
= −65°C with C
T
at V
R
= 4.0 Vdc, f = 1.0 MHz, T
A
= +85°C in the following equation, which defines TC
C
:
TCC
+
CT() 85°C) – CT(–65°C)
106
·
85
)
65
CT(25°C)
Q is calculated by taking the G and C readings of an admittance
bridge at the specified frequency and substituting in the
following equations:
Q
+
2pfC
G
Accuracy limited by measurement of C
T
to
±0.1
pF.
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2
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
TYPICAL DEVICE CHARACTERISTICS
1000
500
C T , DIODE CAPACITANCE (pF)
200
100
50
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
T
A
= 25°C
f = 1.0 MHz
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
1.040
NORMALIZED DIODE CAPACITANCE
I R , REVERSE CURRENT (nA)
1.030
1.020
1.010
1.000
0.990
0.980
0.970
0.960
−75
−50
NORMALIZED TO C
T
at T
A
= 25°C
V
R
= (CURVE)
−25
0
+25
+50
+75
T
J
, JUNCTION TEMPERATURE (°C)
+100
+125
V
R
= 4.0 Vdc
V
R
= 30 Vdc
V
R
= 2.0 Vdc
100
50
20
10
5.0
2.0
1.0
0.50
0.20
0.10
0.05
0.02
0.01
T
A
= 75°C
T
A
= 125°C
T
A
= 25°C
0
5.0
10
15
20
25
30
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
5000
3000
2000
Q, FIGURE OF MERIT
1000
500
300
200
100
50
30
20
10
1.0
2.0
10
3.0
5.0
7.0
V
R
, REVERSE VOLTAGE (VOLTS)
MMBV2101LT1/MV2101
MMBV2109LT1
Q, FIGURE OF MERIT
5000
3000
2000
1000
500
300
200
100
50
30
20
30
10
10
Figure 3. Reverse Current versus Reverse Bias
Voltage
MMBV2101LT1/MV2101
T
A
= 25°C
f = 50 MHz
20
T
A
= 25°C
V
R
= 4.0 Vdc
20
MMBV2109LT1/MV2109
30
50
70
100
f, FREQUENCY (MHz)
200
250
Figure 4. Figure of Merit versus Reverse Voltage
Figure 5. Figure of Merit versus Frequency
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3
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
3
SEE VIEW C
E
1
2
HE
c
b
e
q
0.25
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
A
L
A1
L1
VIEW C
DIM
A
A1
b
c
D
E
e
L
L1
H
E
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4
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