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PRELIMINARY
CY7C271A
32K x 8 Power Switched and
Reprogrammable PROM
Features
• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
— 25 ns (commercial)
— 35 ns (military)
• Low power
— 275 mW (commercial)
•
•
•
•
•
— 330 mW (military)
Super low standby power
— Less than 85 mW when deselected
EPROM technology 100%programmable
Slim 300-mil package
Direct replacement for bipolar PROMs
Capable of withstanding >4001V static discharge
matically powers down into a low-power stand-by mode. The
CY7C271A is packaged in the 300-mil slim package and is
available in a cerDIP package equipped with an erasure win-
dow to provide for reprogrammability. When exposed to UV
light, the PROM is erased and can be reprogrammed. The
memory cells utilize proven EPROM floating gate technology
and byte-wide intelligent programming algorithms.
The CY7C271A offers the advantages of lower power, superior
performance, and programming yield. The EPROM cell re-
quires only 12.5V for the super voltage, and low current re-
quirements allow for gang programming. The EPROM cells
allow each memory location to be tested 100% because each
location is written into, erased, and repeatedly exercised prior
to encapsulation. Each PROM is also tested for AC perfor-
mance to guarantee that after customer programming, the
product will meet DC and AC specification limits.
Reading the 7C271A is accomplished by placing active LOW
signals on CS
1
and CE, and an active HIGH on CS
2
. The contents
of the memory location addressed by the address lines (A
0
–A
14
) will
become available on the output lines (O
0
–O
7
).
Functional Description
The CY7C271A is a high-performance 32,768-word by 8-bit
CMOS PROM. When disabled (CE HIGH), the 7C271A auto-
Logic Block Diagram
O
7
Pin Configurations
DIP/Flatpack
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
O
3
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
A
10
A
11
A
12
A
13
A
14
CS
1
CS
2
CE
O
7
O
6
O
5
O
4
O
3
A
14
A
13
A
12
A
11
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
Y
ADDRESS
X
ADDRESS
256 x 1024
PROGRAMABLE
ARRAY
8 x 1 OF 128
MULTIPLEXER
O
6
O
5
O
4
LCC/PLCC (Opaque Only)
4 3 2 1 32 31 30
29
5
28
6
27
7
26
8
25
9
24
10
23
11
22
12
21
13
14151617 181920
O1
O2
GND
NC
O3
O4
O5
A7
A8
A9
NC
V
CC
A10
A11
A
6
A
5
A
4
A
3
A
2
A
1
A
0
NC
O
0
A
12
A
13
A
14
NC
CS
1
CS
2
CE
O
7
O
6
O
2
O
1
POWER-DOWN
O
0
CE
CS
1
CS
2
Cypress Semiconductor Corporation
Document #: 38-04013 Rev. **
•
3901 North First Street
•
San Jose
•
CA 95134 • 408-943-2600
Revised March 21, 2002
PRELIMINARY
Selection Guide
7C271A-25
Maximum Access Time (ns)
Maximum Operating
Current (mA)
Standby Current
(mA)
Com’l
Military
Com’l
Military
15
15
25
75
7C271A-30
30
75
7C271A-35
35
50
85
15
25
7C271A-45
45
50
60
15
25
CY7C271A
7C271A-55
55
50
60
15
25
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
..................................... −65°C
to +150°C
Ambient Temperature with
Power Applied..................................................−55°C to +125°C
Supply Voltage to Ground Potential
................ −0.5V
to +7.0V
DC Voltage Applied to Outputs
in High Z State
.................................................... −0.5V
to +7.0V
DC Input Voltage
.................................................−3.0V
to +7.0V
DC Program Voltage .....................................................13.0V
Static Discharge Voltage ........................................... >4001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
UV Exposure ................................................ 7258 Wsec/cm
2
Operating Range
Range
Commercial
Industrial
[1]
Military
[2]
Ambient
Temperature
0°C to +700°C
–400°C to +850°C
–550°C to +1250°C
V
CC
5V ±10%
5V ±10%
5V ±10%
Electrical Characteristics
Over the Operating Range
[3, 4]
7C271A-25
7C271A-30
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
OS
I
CC
I
SB
Description
Output HIGH
Voltage
Output LOW Voltage
Input HIGH Level
Input LOW Level
Input Leakage
Current
Output Leakage
Current
Output Short Circuit
Current
[5]
Power Supply
Current
Stand-By Current
Test Conditions
V
CC
= Min., I
OH
= –2.0 mA
V
CC
= Min., I
OL
= 8.0 mA
Guaranteed Input Logical HIGH
Voltage for All Inputs
Guaranteed Input Logical LOW
Voltage for All Inputs
GND < V
IN
< V
CC
GND < V
OUT
< V
CC
,
Output Disable
V
CC
= Max., V
OUT
= GND
V
CC
=Max., I
OUT
= 0 mA,
f = 10 MHz
V
CC
=Max.,
CE = V
IH
Com’l
Mil
Com’l
Mil
15
–10
–10
–20
2.0
Min.
2.4
0.4
V
CC
0.8
+10
+10
–90
75
–10
–10
–20
2.0
Max.
7C271A-35
Min.
2.4
0.4
V
CC
0.8
+10
+10
–90
50
85
15
25
–10
–10
–20
2.0
Max.
7C271A-45
7C271A-55
Min.
2.4
0.4
V
CC
0.8
+10
+10
–90
50
60
15
25
mA
Max.
Unit
V
V
V
V
µA
µA
mA
mA
Capacitance
[4]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
10
10
Unit
pF
pF
Notes:
1. Contact a Cypress representative for information on industrial temperature range specifications.
2. T
A
is the “instant on” case temperature.
3. See the last page of this specification for Group A subgroup testing information.
4. See Introduction to CMOS PROMs in this Data Book for general information on testing.
5. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds.
Document #: 38-04013 Rev. **
Page 2 of 13
PRELIMINARY
AC Test Loads and Waveforms
R1 500
Ω
658
Ω
MIL
R1 500
Ω
658
Ω
MIL
CY7C271A
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
R2 333
Ω
403
Ω
MIL
5 pF
INCLUDING
JIG AND
SCOPE
3.0V
R2 333
Ω
GND
403
Ω
MIL
ALL INPUT PULSES
90%
10%
90%
10%
≤
5 ns
≤
5 ns
(a) NormalLoad
Equivalent to:
(b) High-Z Load
THÉVENIN EQUIVALENT
200
Ω
2.00V Commercial
250
Ω
MIL
1.90V MIL
OUTPUT
Switching Characteristics
Over the Operating Range
[3,4]
7C271A-25
Parameter
t
AA
t
ACS
t
ACE
t
HZCS
t
HZCE
t
PU
t
PD
t
OH
Description
Address to Output Valid
CS
1
/CS
2
Active to
Output Valid
CE Active to Output Valid
CS
1
/CS
2
Inactive to High
Z
CE Inactive to High Z
CE Active to Power-Up
CE Inactive to
Power-Down
Output Data Hold
0
0
30
0
Min.
Max.
25
12
30
12
12
0
35
0
7C271A-30
Min.
Max.
30
18
35
18
18
0
40
0
7C271A-35
Min.
Max.
35
18
35
18
18
0
40
0
7C271A-45
Min.
Max.
45
18
45
18
18
0
50
7C271A-55
Min.
Max.
55
20
55
20
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
Document #: 38-04013 Rev. **
Page 3 of 13
PRELIMINARY
Switching Waveform
I
CC
t
PU
CE
t
PD
CY7C271A
CS
2
CS
1
ACTIVE
INACTIVE
ACTIVE
A
0
- A
14
ADDRA
t
AA
t
ACE
t
AA
ADDRB
t
HZCS
t
OH
t
ACS
t
HZCE
DATA B
O
0
- O
7
DATA A
DATA B
Erasure Characteristics
Wavelengths of light less than 4000 Angstroms begin to erase
the CY7C271A in the windowed package. For this reason, an
opaque label should be placed over the window if the PROM
is exposed to sunlight or fluorescent lighting for extended pe-
riods of time.
The recommended dose of ultraviolet light for erasure is a
wavelength of 2537 Angstroms for a minimum dose (UV inten-
sity multiplied by exposure time) of 25 Wsec/cm
2
. For an ultra-
violet lamp with a 12 mW/cm
2
power rating, the exposure time
would be approximately 35 minutes. The CY7C271A needs to
Table 1. Programming Electrical Characteristics.
Parameter
V
PP
I
PP
V
IHP
V
ILP
V
CCP
Description
Programming Power Supply
Programming Supply Current
Programming Input Voltage HIGH
Programming Input Voltage LOW
Programming V
CC
be within 1 inch of the lamp during erasure. Permanent dam-
age may result if the PROM is exposed to high-intensity UV
light for an extended period of time. 7258 Wsec/cm
2
is the
recommended maximum dosage.
Programming Modes
Programming support is available from Cypress as well as
from a number of third-party software vendors. For detailed
programming information, including a listing of software pack-
ages, please see the PROM Programming Information located
at the end of this section. Programming algorithms can be ob-
tained from any Cypress representative.
Min.
12.5
Max.
13
50
Unit
V
mA
V
V
V
3.0
–0.5
6.0
V
CC
0.4
6.5
Document #: 38-04013 Rev. **
Page 4 of 13
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