LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system cost
and board space. The device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications.
LMUN5111T1G
Series
PNP SILICON
BIAS RESISTOR
TRANSISTORS
3
1
2
CASE 419, STYLE 3
SOT–323 (SC–70)
PIN 3
PIN 1
BASE
(INPUT)
R
1
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
The SC–70/SOT–323 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
R
2
MARKINGDIAGRAM
•
We declare that the material of product compliance with RoHS requirements.
6X
M
Ordering Information
Device
LMUN5111T1G Series
LMUN5111T3G Series
Package
SOT323
SOT323
Shipping
3000/Tape&Reel
10000/Tape&Reel
6X
X
M
=Specific Device Code
=(See Marking Table)
=Date Code
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
V
CBO
50
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
R
θJA
R
θJL
T
J
, T
stg
V
CEO
I
C
Symbol
P
D
50
100
Unit
Vdc
Vdc
mAdc
Max
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
618 (Note 1)
403 (Note 2)
280 (Note 1)
332 (Note 2)
–55 to +150
Unit
mW
°C/W
°C/W
°C/W
°C
Rev.O 1/12
LESHAN RADIO COMPANY, LTD.
LMUN5111T1G Series
DEVICE MARKING AND RESISTOR VALUES
Device
LMUN5111T1G
LMUN5112T1G
LMUN5113T1G
LMUN5114T1G
LMUN5115T1G (Note 3)
LMUN5116T1G (Note 3)
LMUN5130T1G (Note 3)
LMUN5131T1G (Note 3)
LMUN5132T1G (Note 3)
LMUN5133T1G (Note 3)
LMUN5134T1G (Note 3)
LMUN5135T1G (Note 3)
LMUN5136T1G
LMUN5137T1G
Package
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
Marking
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
6M
6N
6P
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
100
22
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
Rev.O 2/12
LESHAN RADIO COMPANY, LTD.
LMUN5111T1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector–Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter–Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
LMUN5111T1G
LMUN5112T1G
LMUN5113T1G
LMUN5114T1G
LMUN5115T1G
LMUN5116T1G
LMUN5130T1G
LMUN5131T1G
LMUN5132T1G
LMUN5133T1G
LMUN5134T1G
LMUN5135T1G
LMUN5136T1G
LMUN5137T1G
I
CBO
I
CEO
I
EBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
50
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
–
–
nAdc
nAdc
mAdc
Collector–Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector–Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
LMUN5111T1G
LMUN5112T1G
LMUN5113T1G
LMUN5114T1G
LMUN5115T1G
LMUN5116T1G
LMUN5130T1G
LMUN5131T1G
LMUN5132T1G
LMUN5133T1G
LMUN5134T1G
LMUN5135T1G
LMUN5136T1G
LMUN5137T1G
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
–
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
Vdc
Collector–Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) LMUN5130T1G/LMUN5131T1G
(I
C
= 10 mA, I
B
= 1 mA) LMUN5115T1G/LMUN5116T1G/
LMUN5132T1G/LMUN5133T1G/LMUN5134T1G
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
LMUN5111T1G
LMUN5112T1G
LMUN5114T1G
LMUN5115T1G
LMUN5116T1G
LMUN5130T1G
LMUN5131T1G
LMUN5132T1G
LMUN5133T1G
LMUN5134T1G
LMUN5135T1G
LMUN5113T1G
LMUN5136T1G
LMUN5137T1G
V
CE(sat)
V
OL
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kΩ)
4. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
Rev.O 3/12
LESHAN RADIO COMPANY, LTD.
LMUN5111T1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
LMUN5130T1G
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
LMUN5115T1G
LMUN5116T1G
LMUN5131T1G
LMUN5132T1G
Input Resistor
LMUN5111T1G
LMUN5112T1G
LMUN5113T1G
LMUN5114T1G
LMUN5115T1G
LMUN5116T1G
LMUN5130T1G
LMUN5131T1G
LMUN5132T1G
LMUN5133T1G
LMUN5134T1G
LMUN5135T1G
LMUN5136T1G
LMUN5137T1G
LMUN5111T1G/LMUN5112T1G/LMUN5113T1G/
LMUN5136T1G
LMUN5114T1G
LMUN5115T1G/LMUN5116T1G
LMUN5130T1G/LMUN5131T1G/LMUN5132T1G
LMUN5133T1G
LMUN5134T1G
LMUN5135T1G
LMUN5137T1G
Symbol
V
OH
Min
4.9
Typ
–
Max
–
Unit
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
kΩ
Resistor Ratio
R
1
/R
2
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
50
0
−50
R
θJA
= 833°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
Rev.O 4/12
LESHAN RADIO COMPANY, LTD.
LMUN5111T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5111T1G
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
hFE , DC CURRENT GAIN (NORMALIZED)
I
C
/I
B
= 10
1000
V
CE
= 10 V
T
A
= −25°C
0.1
75°C
25°C
T
A
= 75°C
100
25°C
−25°C
0.01
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
75°C
25°C
T
A
= −25°C
Cob , CAPACITANCE (pF)
3
IC, COLLECTOR CURRENT (mA)
10
1
2
0.1
1
0.01
0
1
2
V
O
= 5 V
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
10
T
A
= −25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
Rev.O 5/12
Analog electronics
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