Surface Mount RF Schottky
Diodes in SOT-363 (SC-70, 6 Lead)
Technical Data
HSMS-280K/L / M / N / P /R
HSMS-281K/L
HSMS-282K/L / M / N / P /R
Features
• Unique configurations in
surface mount SOT-363
package
– increase flexibility
– save board space
– reduce cost
• HSMS-28xK grounded
center leads provide up to
10 dB higher isolation
• Matched diodes for
consistent performance
• Better thermal conductivity
for higher power dissipation
Package Lead Code
Identification
(Top View)
HIGH ISOLATION
UNCONNECTED PAIR
6
5
4
Description
These Schottky diodes are specifi-
cally intended for analog and digital
applications, including DC biased
detecting; mixing; switching;
sampling; clipping and clamping; and
wave shaping. This series offers a
wide range of specifications and
package configurations for design
versatility. The benefit of this added
flexibility translates into more board
space and reduced cost.
Available in various package
configurations, these families of
diodes provide low cost solutions to
a wide variety of design problems.
Hewlett-Packard’s manufacturing
techniques assure that when
multiple diodes are mounted into a
single SOT-363 package, they are
taken from adjacent sites on the
wafer, assuring the highest possible
degree of match.
UNCONNECTED
TRIO
6
5
4
1
2
3
K
COMMON
CATHODE QUAD
6
5
4
1
2
3
L
COMMON
ANODE QUAD
6
5
4
1
2
M
3
1
2
N
3
Applications
•
HSMS-282a — good general
purpose diode, specifically for:
– DC biased detection at
< 2.5 GHz
– moderate voltage clipping
and clamping
– mixing applications < 3 GHz
•
HSMS-280a — in high voltage
clipping and clamping
applications
•
HSMS-281a — low 1/f @ 1 GHz
mixing
6
BRIDGE
QUAD
5
4
6
RING
QUAD
5
4
1
2
P
3
1
2
R
3
Pin Connections and
Package Marking
1
2
3
6
5
4
GU
Notes:
1. Package marking provides
orientation and identification.
2. See “Electrical Specifications” for
appropriate package marking.
2
Electrical Specifications, T
C
= +25°C, Single Diode
[1]
Part
Package
Number Marking Lead
HSMS- Code
[2]
Code Configuration
280K
280L
280M
280N
280P
280R
281K
281L
282K
AK
AL
H
N
AP
O
BK
BL
CK
K
L
M
N
P
R
K
L
K
L
M
N
P
R
High Isolation
Unconnected Pair
Unconnected Trio
Common Cathode Quad
Common Anode Quad
Bridge Quad
Ring Quad
High Isolation
Unconnected Pair
Unconnected Trio
High Isolation
Unconnected Pair
Unconnected Trio
Common Cathode Quad
Common Anode Quad
Bridge Quad
Ring Quad
Minimum Maximum Maximum Maximum
Typical
Breakdown Forward Forward Reverse Maximum
Dynamic
Voltage
Voltage
Voltage Leakage Capacitance Resistance
V
BR
(V)
V
F
(mV)
V
F
(V) @ I
R
(nA) @
C
T
(pF)
R
D
(Ω)
I
F
(mA)
V
R
(V)
70
400
1.0 15
200 50
2.0
2.0
35
35
20
400
1.0 35
200 15
1.2
15
15
340
0.7 30
100
1
1.0
12
282L
CL
282M
HH
282N
NN
282P
CP
282R
OO
Test Conditions
I
R
= 10
µA
I
F
= 1 mA
[3]
V
F
= 0 V
I
F
= 5 mA
f=1
MHz
[4]
Notes:
1. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at
5 mA, except HSMS-282a which is measured at 20 mA.
2. Package marking code is laser marked.
3.
∆V
F
for diodes in trios and quads is 15.0 mV maximum at 1.0 mA.
4. ∆C
TO
for diodes in trios and quads is 0.2 pF maximum.
Absolute Maximum Ratings, T
C
= 25ºC
Symbol Parameter
I
f
P
IV
T
J
T
STG
θ
jc
Unit Absolute Maximum
[1]
1
Same as V
BR
150
-65 to 150
140
Forward Current (1µs Pulse) Amp
Peak Inverse Voltage
V
Junction Temperature
°C
Storage Temperature
°C
[2]
Thermal Resistance
°C/W
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the pack-
age pins where contact is made to the circuit board.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
3
Typical Performance, T
C
= 25°C (unless otherwise noted), Single Diode
100
I
F
– FORWARD CURRENT (mA)
I
F
– FORWARD CURRENT (mA)
100
I
F
– FORWARD CURRENT (mA)
100
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
T
A
= –25°C
10
10
10
1
1
1
0.1
0.01
0
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
T
A
= –25°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
F
– FORWARD VOLTAGE (V)
0.1
0.01
0
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
T
A
= –25°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
F
– FORWARD VOLTAGE (V)
0.1
0.01
0
0.10
0.20
0.30
0.40
0.50
V
F
– FORWARD VOLTAGE (V)
Figure 1. Forward Current vs.
Forward Voltage at Temperatures—
HSMS-280a Series.
Figure 2. Forward Current vs.
Forward Voltage at Temperatures—
HSMS-281a Series.
Figure 3. Forward Current vs.
Forward Voltage at Temperatures—
HSMS-282a Series.
100,000
100,000
100,000
10,000
I
R
– REVERSE CURRENT (nA)
10,000
I
R
– REVERSE CURRENT (nA)
10,000
I
R
– REVERSE CURRENT (nA)
1000
1000
1000
100
100
100
10
1
0
10
20
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
30
40
50
10
1
0
5
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
10
15
10
1
0
5
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
10
15
V
R
– REVERSE VOLTAGE (V)
V
R
– REVERSE VOLTAGE (V)
V
R
– REVERSE VOLTAGE (V)
Figure 4. Reverse Current vs.
Reverse Voltage at Temperatures—
HSMS-280a Series.
Figure 5. Reverse Current vs.
Reverse Voltage at Temperatures—
HSMS-281a Series.
Figure 6. Reverse Current vs.
Reverse Voltage at Temperatures—
HSMS-282a Series.
4
Typical Performance, T
C
= 25°C (unless otherwise noted), Single Diode,
continued
1000
R
D
– DYNAMIC RESISTANCE (Ω)
2
1.25
C
T
– CAPACITANCE (pF)
C
T
– CAPACITANCE (pF)
0
10
20
30
40
50
1.5
1
100
0.75
1
0.50
10
HSMS-2800 SERIES
HSMS-2810 SERIES
HSMS-2820 SERIES
1
10
100
0.5
0.25
1
0.1
0
V
R
– REVERSE VOLTAGE (V)
0
0
2
4
6
8
10
12
14
16
V
R
– REVERSE VOLTAGE (V)
I
F
– FORWARD CURRENT (mA)
Figure 7. Dynamic Resistance vs.
Forward Current.
Figure 8. Total Capacitance vs.
Reverse Voltage—HSMS-280a Series.
Figure 9. Total Capacitance vs.
Reverse Voltage—HSMS-281a Series.
1
C
T
– CAPACITANCE (pF)
0.8
0.6
0.4
0.2
0
0
2
4
6
8
V
R
– REVERSE VOLTAGE (V)
Figure 10. Total Capacitance vs.
Reverse Voltage—HSMS-282a Series.
5
Applications Information
Introduction —
Product Selection
Hewlett-Packard’s family of six-
lead Schottky products provides
unique solutions to many design
problems.
The first step in choosing the right
product is to select the diode type.
All of the products in the
HSMS-282a family use the same
diode chip, and the same is true of
the HSMS-281a and HSMS-280a
families. Each family has a
different set of characteristics
which can be compared most
easily by consulting the SPICE
parameters in Table 1.
A review of these data shows that
the HSMS-280a family has the
highest breakdown voltage, but at
the expense of a high value of
series resistance (R
s
). In applica-
tions which do not require high
voltage the HSMS-282a family,
with a lower value of series
resistance, will offer higher
current carrying capacity and
better performance. The HSMS-
281a family is a hybrid Schottky
(as is the HSMS-280a), offering
lower 1/f or flicker noise than the
HSMS-282a family.
In general, the HSMS-282a family
should be the designer’s first
choice, with the -280a family
reserved for high voltage applica-
tions and the HSMS-281a family
for low flicker noise applications.
Six Lead Applications
The HSMS-28xL is an uncon-
nected trio of Schottky diodes. It
can be used as a fast SP3T switch,
as shown in Figure 11.
The HSMS-28xM six lead product
is designed to clamp four data
lines to ground, protecting against
positive noise spikes, as shown in
Figure 13.
1
2
3
4
Figure 13. Clamping Four Lines.
Figure 11. SP3T Switch.
The unconnected trio can also be
used to clamp three data lines, as
shown in Figure 12. Note that
either polarity of clamping can be
provided.
Similarly, the HSMS-28xN com-
mon anode quad can be used to
clamp four data lines against
negative noise spikes, as shown in
Figure 14.
1
2
3
4
Figure 14. Clamping Four Lines.
Figure 12. Clamping Three Lines.
Table 1. Typical SPICE Parameters.
The HSMS-28xP is open bridge
quad is designed for sampling
circuits, as shown in Figure 15.
Note that the bridge is closed at
opposite ends by external connec-
tions (a trace on the circuit
board).
sample
point
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
(V
J
)
P
T
(XTI)
M
Units
V
pF
eV
A
A
Ω
V
HSMS-280a
75
1.6
.69
10E-5
3 E-8
1.08
30
0.65
2
0.5
HSMS-281a
25
1.1
.69
10E-5
4.8 E-9
1.08
10
0.65
2
0.5
HSMS-282a
15
0.7
.69
10E-4
2.2 E-8
1.08
6.0
0.65
2
0.5
sampling
pulse
Figure 15. Sampling Circuit.
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