BCF33TR datasheet, PDF - EEWORLD Datasheet

BCF33TR: DescriptionSmall Signal Bipolar Transistor, 320V V(BR)CEO, 1-Element, NPN, Silicon,; CategoryDiscrete semiconductor The transistor; File Size94KB，1 Pages; ManufacturerCentral Semiconductor

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BCF33TR Overview

Small Signal Bipolar Transistor, 320V V(BR)CEO, 1-Element, NPN, Silicon,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Reach Compliance Code	not_compliant
Other features	LOW NOISE
Collector-based maximum capacity	2.5 pF
Collector-emitter maximum voltage	320 V
Configuration	SINGLE
Minimum DC current gain (hFE)	420
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
VCEsat-Max	0.25 V

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