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K4S560432D-NC7C

Description
Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 7.62 X 14 MM, STSOP2-54
Categorystorage    storage   
File Size82KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4S560432D-NC7C Overview

Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 7.62 X 14 MM, STSOP2-54

K4S560432D-NC7C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionSOP, TSSOP54,.36,20
Contacts54
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
JESD-609 codee0
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals54
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeTSSOP54,.36,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.22 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
K4S560432D
CMOS SDRAM
256Mbit SDRAM
16M x 4bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
May. 2002
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 May. 2002

K4S560432D-NC7C Related Products

K4S560432D-NC7C K4S560432D-NL1L K4S560432D-NC75 K4S560432D-NC1L K4S560432D-NC1H 350697 K4S560432D-NL1H K4S560432D-NL75
Description Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 7.62 X 14 MM, STSOP2-54 Synchronous DRAM, 64MX4, 6ns, CMOS, PDSO54, 7.62 X 14 MM, STSOP2-54 Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 7.62 X 14 MM, STSOP2-54 Synchronous DRAM, 64MX4, 6ns, CMOS, PDSO54, 7.62 X 14 MM, STSOP2-54 Synchronous DRAM, 64MX4, 6ns, CMOS, PDSO54, 7.62 X 14 MM, STSOP2-54 Extraction Tool 2063388- 1 Synchronous DRAM, 64MX4, 6ns, CMOS, PDSO54, 7.62 X 14 MM, STSOP2-54 Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 7.62 X 14 MM, STSOP2-54
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible - incompatible incompatible
Maker SAMSUNG - SAMSUNG SAMSUNG SAMSUNG - SAMSUNG SAMSUNG
Parts packaging code TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 - TSOP2 TSOP2
package instruction SOP, TSSOP54,.36,20 SOP, TSSOP54,.36,20 SOP, TSSOP54,.36,20 SOP, TSSOP54,.36,20 SOP, TSSOP54,.36,20 - SOP, TSSOP54,.36,20 SOP, TSSOP54,.36,20
Contacts 54 54 54 54 54 - 54 54
Reach Compliance Code compliant compliant compliant compliant compliant - compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST - FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 5.4 ns 6 ns 5.4 ns 6 ns 6 ns - 6 ns 5.4 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz 100 MHz 133 MHz 100 MHz 100 MHz - 100 MHz 133 MHz
I/O type COMMON COMMON COMMON COMMON COMMON - COMMON COMMON
interleaved burst length 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 - 1,2,4,8 1,2,4,8
JESD-30 code R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 - R-PDSO-G54 R-PDSO-G54
JESD-609 code e0 e0 e0 e0 e0 - e0 e0
memory density 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit - 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM - SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 4 4 4 4 4 - 4 4
Number of functions 1 1 1 1 1 - 1 1
Number of ports 1 1 1 1 1 - 1 1
Number of terminals 54 54 54 54 54 - 54 54
word count 67108864 words 67108864 words 67108864 words 67108864 words 67108864 words - 67108864 words 67108864 words
character code 64000000 64000000 64000000 64000000 64000000 - 64000000 64000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C - 70 °C 70 °C
organize 64MX4 64MX4 64MX4 64MX4 64MX4 - 64MX4 64MX4
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE - 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP SOP SOP SOP SOP - SOP SOP
Encapsulate equivalent code TSSOP54,.36,20 TSSOP54,.36,20 TSSOP54,.36,20 TSSOP54,.36,20 TSSOP54,.36,20 - TSSOP54,.36,20 TSSOP54,.36,20
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 240 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED 240
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V - 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192 8192 - 8192 8192
self refresh YES YES YES YES YES - YES YES
Continuous burst length 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP - 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A - 0.002 A 0.002 A
Maximum slew rate 0.22 mA 0.19 mA 0.2 mA 0.19 mA 0.19 mA - 0.19 mA 0.2 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V - 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V - 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V - 3.3 V 3.3 V
surface mount YES YES YES YES YES - YES YES
technology CMOS CMOS CMOS CMOS CMOS - CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL - COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING - GULL WING GULL WING
Terminal pitch 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm - 0.5 mm 0.5 mm
Terminal location DUAL DUAL DUAL DUAL DUAL - DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED 30
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