K4M51163LE-YL1L datasheet, PDF

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K4M51163LE-YL1L: DescriptionSynchronous DRAM, 32MX16, 7ns, CMOS, PBGA54; Categorystorage storage; File Size113KB，12 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4M51163LE-YL1L Overview

Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54

K4M51163LE-YL1L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	FBGA, BGA54,9X9,32
Reach Compliance Code	compliant
Maximum access time	7 ns
Maximum clock frequency (fCLK)	105 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	S-PBGA-B54
JESD-609 code	e0
memory density	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of terminals	54
word count	33554432 words
character code	32000000
Maximum operating temperature	70 °C
Minimum operating temperature	-25 °C
organize	32MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA54,9X9,32
Package shape	SQUARE
Package form	GRID ARRAY, FINE PITCH
power supply	1.8/2.5,2.5 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.0015 A
Maximum slew rate	0.28 mA
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

K4M51163LE-YL1L Related Products

	K4M51163LE-YL1L	K4M51163LE-PF1H	K4M51163LE-PL1H	K4M51163LE-PL1L	K4M51163LE-PC80	K4M51163LE-YC1L	K4M51163LE-YL80	K4M51163LE-YL1H
Description	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54	Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54
Is it Rohs certified?	incompatible	conform to	conform to	conform to	conform to	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
package instruction	FBGA, BGA54,9X9,32	FBGA, BGA54,9X9,32	FBGA, BGA54,9X9,32	FBGA, BGA54,9X9,32	FBGA, BGA54,9X9,32	FBGA, BGA54,9X9,32	FBGA, BGA54,9X9,32	FBGA, BGA54,9X9,32
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Maximum access time	7 ns	7 ns	7 ns	7 ns	6 ns	7 ns	6 ns	7 ns
Maximum clock frequency (fCLK)	105 MHz	105 MHz	105 MHz	105 MHz	125 MHz	105 MHz	125 MHz	105 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	16	16	16	16	16
Number of terminals	54	54	54	54	54	54	54	54
word count	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words
character code	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
Minimum operating temperature	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C
organize	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	FBGA	FBGA	FBGA	FBGA	FBGA	FBGA	FBGA
Encapsulate equivalent code	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
power supply	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.0015 A	0.0015 A	0.0015 A	0.0015 A	0.0015 A	0.0015 A	0.0015 A	0.0015 A
Maximum slew rate	0.28 mA	0.32 mA	0.32 mA	0.28 mA	0.35 mA	0.28 mA	0.35 mA	0.32 mA
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM

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Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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