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K7A801800M-TC20

Description
Cache SRAM, 512KX18, 3.1ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
Categorystorage    storage   
File Size540KB,20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K7A801800M-TC20 Overview

Cache SRAM, 512KX18, 3.1ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7A801800M-TC20 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time3.1 ns
Other featuresSELF-TIMED WRITE CYCLE
JESD-30 codeR-PQFP-G100
length20 mm
memory density9437184 bit
Memory IC TypeCACHE SRAM
memory width18
Number of functions1
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX18
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
width14 mm
K7A803600M
K7A801800M
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
0.0
0.1
History
Initial draft
Modify DC characteristics( Input Leakage Current test Conditions)
form V
DD
=V
SS
to V
DD
to Max.
Change DC Characteristics.
I
SB
value from 80mA to 130mA at -16
I
SB
value from 70mA to 120mA at -15
I
SB
value from 65mA to 110mA at -14
I
SB
value from 50mA to 100mA at -10
I
SB1
value from 10mA to 30mA
I
SB2
value from 10mA to 30mA
1. Remove speed bin -16.
2. Changed DC condition at Icc and parameters
Icc ; from 400mA to 420mA at -15,
from 375mA to 400mA at -14,
from 300mA to 350mA at -10,
I
SB
; from 120mA to 150mA at -15,
from 110mA to 130mA at -14,
from 100mA to 120mA at -10,
1. A
DD
x32 organization.
1. A
DD
V
DDQ
Supply voltage( 2.5V I/O )
1. Changed V
OL
Max value from 0.2V to 0.4V at 2.5V I/O.
1. Final spec Release.
2. Remove x32 organization.
1. Remove V
DDQ
Supply voltage( 2.5V I/O )
1. Add V
DDQ
Supply voltage( 2.5V I/O )
1. Change tOE from 4.0ns to 3.8ns at -14 .
1. Add tCYC 167MHz and 200MHz.
2. Changed DC condition at Icc and parameters
Icc ; from 420mA to 400mA at -15,
from 400mA to 350mA at -14,
from 350mA to 300mA at -10,
1. Change tCD from 4.0ns to 3.8ns at -14 .
Draft Date
April. 10 . 1998
June .08. 1998
Remark
Preliminary
Preliminary
0.2
Aug . 27. 1998
Preliminary
0.3
Sep. 09. 1998
Preliminary
0.4
0.5
0.6
1.0
Oct. 15. 1998
Dec. 10. 1998
Dec. 23. 1998
Jan. 29. 1999
Preliminary
Preliminary
Preliminary
Final
2.0
3.0
4.0
5.0
Feb. 25. 1999
May. 13. 1999
July. 05. 1999
Nov. 19. 1999
Final
Final
Final
Final
6.0
March 14. 2000 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
March 2000
Rev 6.0
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