M366F1680BJ2-C50 datasheet, PDF

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M366F1680BJ2-C50: DescriptionEDO DRAM Module, 16MX64, 50ns, CMOS, DIMM-168; Categorystorage storage; File Size469KB，21 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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M366F1680BJ2-C50 Overview

EDO DRAM Module, 16MX64, 50ns, CMOS, DIMM-168

M366F1680BJ2-C50 Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	50 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	1073741824 bit
Memory IC Type	EDO DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum standby current	0.008 A
Maximum slew rate	1.6 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

M366F1680BJ2-C50 Related Products

	M366F1680BJ2-C50	M366F1600BJ2-C50	M366F1600BJ2-C60	M366F1680BJ2-C60
Description	EDO DRAM Module, 16MX64, 50ns, CMOS, DIMM-168	EDO DRAM Module, 16MX64, 50ns, CMOS, DIMM-168	EDO DRAM Module, 16MX64, 60ns, CMOS, DIMM-168	EDO DRAM Module, 16MX64, 60ns, CMOS, DIMM-168
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168	168	168
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	50 ns	50 ns	60 ns	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
memory width	64	64	64	64
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	168	168	168	168
word count	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	16MX64	16MX64	16MX64	16MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	4096	4096	8192
Maximum standby current	0.008 A	0.008 A	0.008 A	0.008 A
Maximum slew rate	1.6 mA	1.92 mA	1.76 mA	1.44 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL

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