IRFU121 datasheet, PDF - EEWORLD Datasheet

IRFU121: Description8.4A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA; CategoryDiscrete semiconductor The transistor; File Size173KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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IRFU121 Overview

8.4A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	36 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (Abs) (ID)	8.4 A
Maximum drain current (ID)	8.4 A
Maximum drain-source on-resistance	0.27 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	50 W
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	34 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	59 ns
Maximum opening time (tons)	58 ns

	IRFU121
Description	8.4A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	36 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (Abs) (ID)	8.4 A
Maximum drain current (ID)	8.4 A
Maximum drain-source on-resistance	0.27 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	50 W
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	34 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	59 ns
Maximum opening time (tons)	58 ns

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