NE6500379A-T1-A datasheet, PDF

NE6500379A-T1-A: DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size217KB，8 Pages; ManufacturerNEC Electronics; Environmental Compliance

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NE6500379A-T1-A Overview

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NEC Electronics
package instruction	79A, 4 PIN
Reach Compliance Code	compliant
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	15 V
Maximum drain current (ID)	1 A
FET technology	METAL SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-PQMW-F4
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	MICROWAVE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	QUAD
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

	NE6500379A-T1-A	NE6500379A-A
Description	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN
Is it Rohs certified?	conform to	conform to
Maker	NEC Electronics	NEC Electronics
package instruction	79A, 4 PIN	MICROWAVE, R-PQMW-F4
Reach Compliance Code	compliant	compliant
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	15 V	15 V
Maximum drain current (ID)	1 A	1 A
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
highest frequency band	S BAND	S BAND
JESD-30 code	R-PQMW-F4	R-PQMW-F4
Number of components	1	1
Number of terminals	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROWAVE	MICROWAVE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	QUAD	QUAD
Maximum time at peak reflow temperature	10	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE

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