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MC804256K32L-15

Description
SRAM
Categorystorage    storage   
File Size176KB,10 Pages
ManufacturerMonolithic System Technology Inc
Download Datasheet Parametric Compare View All

MC804256K32L-15 Overview

SRAM

MC804256K32L-15 Parametric

Parameter NameAttribute value
MakerMonolithic System Technology Inc
package instruction,
Reach Compliance Codeunknown
MC804256K32, MC804256K36
256Kx32, 256Kx36 Flow-Through
Synchronous Burst SRAM
ì
High performance, low power flow-through SRAM
ì
Ultra low power for high capacity applications
ì
High performance
ì
66, 83, 100 MHz Speed grades
ì
2-1-1-1 Burst Read
ì
1-1-1-1 Burst Write
ì
2-1-1-1-1-1-1-1... burst operation
ì
Low power
ì
Low active power
ì
Ultra low power ZZ standby mode
ì
Single 3.3V supply (VDD)
ì
Isolated 3.3V or 2.5V I/O supply (VDDQ)
ì
Compatibility
ì
Individual Byte Write and Global Write masking
ì
Interleave and burst address support
ì
Two chip enables for easy expansion
ì
Industry standard 100-Pin SRAM pinout
ì
Industry standard SRAM specification
ì
Applications
ì
Ideal for high speed, low power communica-
tions buffers
ì
Power sensitive portable DSP applications
______________________________________________
Overview
The MoSys MC804256K is a low power flow-through
synchronous SRAM. Fabricated using an advanced low
power, high performance CMOS process, the MoSys
MC804256K is forward pin and function compatible with
standard 32Kx32/36, 64Kx32/36 and 128Kx32/36 SRAM
devices. These devices also include additional operating
features like low power ZZ standby mode and linear
burst order addressing. These additional operating fea-
tures are defined so that, with proper implementation,
designs can work transparently with 32Kx32/36,
64Kx32/36, 128Kx32/36 and 256Kx32/36 configurations.
This allows the designer maximum configuration flexi-
bility within a single footprint layout.
The MoSys MC804256K32/36 supports flow-through
SRAM operating modes at maximum burst frequency
including indefinite pipeline read or write (2-1-1-1-1-1-
1...)
Parameter
Cycle Time
Access Time
Clock to High-Z
Symbol
tKC
tKQ
tKQHZ
-15
15
10
8.6
-12
12
9
7.5
-10
10
8.5
5
Units
ns
ns
ns
The MC804256K is packaged in a standard 100-pin
LQFP.
Lowest Power
The MC804256K flow-through SRAM affords systems
dramatic power savings due to the benefits of its pro-
prietary MoSys technology. Peak operating power of a
typical SRAM is 5x that of the MC804256K. This makes
it ideal for portable applications as well as applications
requiring a large amount of static RAM.
Part Number Designation
Example:
MC804256K32L-15 I
Device Designation:
MC8:,
Series:
04
Organization:
256K32, 256K36
Package Type:
L=LQFP
Speed: – 15
66 MHz
– 12
83 MHz
– 10
100 MHz
Temp:
I
= Industrial Temperature, optional
DS13, Rev 1.2 – 8/25/99
Preliminary Information
LBO#
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
NC
NC
A10
A11
A12
A13
A14
A15
A16
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
NC, (DQP3)
DQ17
DQ18
VDDQ
VSSQ
DQ19
DQ20
DQ21
DQ22
VSSQ
VDDQ
DQ23
DQ24
NC
VDD
NC
VSS
DQ25
DQ26
VDDQ
VSSQ
DQ27
DQ28
DQ29
DQ30
VSSQ
VDDQ
DQ31
DQ32
NC, (DQP4)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A6
A7
CE1#
CE2
BW4#
BW3#
BW2#
BW1#
A17
VDD
VSS
CLK
GW#
BWE#
OE#
ADSC#
ADSP#
ADV#
A8
A9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
100 Pin LQFP
20 mm x 14 mm body
0.65 mm nominal pin pitch
NC, (DQP2)
DQ16
DQ15
VDDQ
VSSQ
DQ14
DQ13
DQ12
DQ11
VSSQ
VDDQ
DQ10
DQ9
VSS
NC
VDD
ZZ
DQ8
DQ7
VDDQ
VSSQ
DQ6
DQ5
DQ4
DQ3
VSSQ
VDDQ
DQ2
DQ1
NC, (DQP1)
Figure 1. Pin Function
Page 1
© 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086

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