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FLU17XM

Description
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE XM, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size82KB,4 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
Download Datasheet Parametric View All

FLU17XM Overview

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE XM, 3 PIN

FLU17XM Parametric

Parameter NameAttribute value
MakerFUJITSU
package instructionMICROWAVE, R-CQMW-F4
Contacts4
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
FET technologyJUNCTION
highest frequency bandL BAND
JESD-30 codeR-CQMW-F4
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formMICROWAVE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment7.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationQUAD
Transistor component materialsGALLIUM ARSENIDE

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