RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE XM, 3 PIN
Parameter Name | Attribute value |
Maker | FUJITSU |
package instruction | MICROWAVE, R-CQMW-F4 |
Contacts | 4 |
Reach Compliance Code | compliant |
Other features | HIGH RELIABILITY |
Shell connection | SOURCE |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 15 V |
FET technology | JUNCTION |
highest frequency band | L BAND |
JESD-30 code | R-CQMW-F4 |
Number of components | 1 |
Number of terminals | 4 |
Operating mode | DEPLETION MODE |
Maximum operating temperature | 175 °C |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | RECTANGULAR |
Package form | MICROWAVE |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 7.5 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | FLAT |
Terminal location | QUAD |
Transistor component materials | GALLIUM ARSENIDE |