Liteon Semiconductor Corporation
LSH4912
Micro Power, Ultra-Sensitive Hall Switch Sensor
FEATURES
Micro power design
Operation with North or South pole(omni polar)
1.8V to 5.5V battery operation
High sensitivity and high stability of the magnetic
switching points
High resistance to mechanical stress
CMOS output, no outside pullup resistor needed
Good RF noise immunity
-40
℃
to 85
℃
operating temperature
Packages: TSOT23-3L, TSOT23-6L, SC70-3L,
SC70-4L,SC70-6L, and DFN2*2-6L
GENERAL DESCRIPTION
The LSH4912 is an Integrated Hall effect sensor designed
specifically to meet the requirements of low-power
devices. e.g. as an On/Off switch in Cellular Flip-Phones,
with battery operating voltages of 1.8V to 5.5V.
Precise magnetic switching points and high temperature
stability are achieved through the unique design of the
internal circuit.
An onboard clock scheme is used to reduce the average
operating current of the IC.
During the operate phase the IC compares the actual
magnetic field detected with the internally compensated
switching points. The output is switched at the end of
each operating phase.
During the Stand-by phase the output stage is latched
and the current consumption of the device reduced to
some µA.
The IC switching behavior is Omnipolar, i.e. it can be
switched on with either the North or South pole of a
magnet.
FUNCTIONAL BLOCK DIAGRAM
TYPICAL APPLICATION
1/9
Rev1.0
Liteon Semiconductor Corporation
LSH4912
Micro Power, Ultra-Sensitive Hall Switch Sensor
PIN CONFIGURATION
(1) TSOT23-3L/SC70-3L
(Top View)
(2) TSOT23-6L/SC70-6L
(Top View)
(3) SC70-4L
(Top View)
(4) DFN2*2-6L
(Top View)
TSOT23-3L/SC70-3L
1
2
3
Pin
TSOT23-6L/SC70-6L
1
3
4,5
2,6
SC70-4L
3
4
2
1
DFN6L
1
3
5
2,4,6
Symbol
VDD
VOUT
GND
NC
Function
Supply Voltage
CMOS Output
Ground
Not Connected
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Maximum
Supply Voltage
V
DD
5.5
Supply Current
I
DD
1.8
Output Voltage
V
O
5.5
Output Current
I
O
1
Operating Temperature Range
T
A
-40 to 85
Junction Temperature
T
J
-40 to 150
Storage Temperature
T
STG
-40 to 150
Magnetic Flux Density
B
unlimited
Note: Stress above the listed absolute maximum rating may cause permanent damage to the device
Unit
V
mA
V
mA
℃
℃
℃
mT
OPERATING RANGE
Parameter
Symbol
Min.
Typ.
1)
Supply Voltage
V
DD
1.8
2.7
Output Voltage
V
O
-0.3
2.7
Ambient Temperature
T
A
-40
25
1)
. A Ceramic Bypass Capacitor of 0.1uF at V
DD
to GND is highly recommended.
Max.
5.5
5.5
85
Unit
V
V
℃
ELECTRICAL CHARACTERISTICS
Parameter
Averaged Supply Current
Supply Current
During Operating Time
Supply Current
During Standby Time
Output High Voltage
Output Low Voltage
Symbol
I
DD(AVG)
I
DD(OP)
I
DD(STB)
VOH
VOL
Test Condition
Min.
Typ.
3
1)
1.1
1)
2.5
1)
Max.
20
Unit
uA
mA
uA
Io=-0.5mA
Io=+0.5mA
VDD-0.4V
0.1
0.01
60
150
0.04
Output Leakage Current
Operating Time
Standby Time
Duty Cycle
1)
Operating voltage is 2.7V.
I
O(LEAK)
T
OP
T
STB
T
OP
/ T
STB
0.3
0.4
1
V
V
uA
us
ms
%
2/9
Rev1.0
Liteon Semiconductor Corporation
LSH4912
Micro Power, Ultra-Sensitive Hall Switch Sensor
OUTPUT-SIGNAL LSH4912
V
OUT
V
OH
Turn OFF
V
OL
B
OPN
B
RPN
0
B
RPS
B
OPS
Turn ON
B
TYPICAL PERFORMANCE CHARACTERISTICS
Magnetic switching points versus temperature (VDD=2.7V)
B[G] 80
60
40
20
0
-20
-40
-60
-80
-40
-20
0
20
40
60
B
RPN
B
OPN
80
T [
o
C]
Average current versus supply voltage
I
DD
[uA] 20
18
16
14
12
10
8
6
4
2
0
2.5
3
3.5
4
4.5
5
5.5
V
DD
[V]
I
DD
[uA] 10
8
6
4
2
0
-40
-20
0
20
40
60
80
T [
o
C]
Average current versus temperature (V
DD
=2.7V)
Magnetic switching points versus supply voltage
B[G] 80
B
OPS
B
RPS
60
40
20
0
-20
-40
-60
-80
2.5
3
3.5
4
4.5
5
B
OPS
B
RPS
B
RPN
B
OPN
5.5
V
DD
[V]
4/9
Rev1.0
Integrated technical exchanges
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