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IRF630S

Description
9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3
CategoryDiscrete semiconductor    The transistor   
File Size100KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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IRF630S Overview

9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3

IRF630S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging codeSOT404
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)250 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)9 A
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)88 W
Maximum pulsed drain current (IDM)36 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF630, IRF630S
FEATURES
’Trench’
technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 200 V
I
D
= 9 A
g
R
DS(ON)
400 mΩ
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using
Trench
technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package
The IRF630S is supplied in the SOT404 (D
2
PAK) surface mounting package
PINNING
PIN
1
2
3
tab
gate
drain
1
source
drain
DESCRIPTION
SOT78 (TO220AB)
tab
SOT404 (D
2
PAK)
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 ˚C to 175˚C
T
j
= 25 ˚C to 175˚C; R
GS
= 20 kΩ
T
mb
= 25 ˚C; V
GS
= 10 V
T
mb
= 100 ˚C; V
GS
= 10 V
T
mb
= 25 ˚C
T
mb
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
±
20
9
6.3
36
88
175
UNIT
V
V
V
A
A
A
W
˚C
1
It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100

IRF630S Related Products

IRF630S IRF630S/T3
Description 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3 TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power
Maker NXP NXP
Parts packaging code SOT SOT
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Manufacturer packaging code SOT404 SOT404
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 250 mJ 250 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V
Maximum drain current (ID) 9 A 9 A
Maximum drain-source on-resistance 0.4 Ω 0.4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 36 A 36 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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