Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D049
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
Very low V
F
MEGA Schottky barrier
rectifiers
Product data sheet
2003 Aug 20
NXP Semiconductors
Product data sheet
Very low V
F
MEGA
Schottky barrier rectifiers
FEATURES
•
Very low forward voltage
•
High surge current
•
Very small plastic SMD package.
APPLICATIONS
•
Low voltage rectification
•
High efficiency DC/DC conversion
•
Voltage clamping
•
Inverse polarity protection
•
Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
QUICK REFERENCE DATA
SYMBOL
I
F
V
R
PARAMETER
forward current
reverse voltage
PMEG2005AEA
PMEG3005AEA
PMEG4005AEA
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
20
30
40
V
V
V
MAX.
0.5
UNIT
A
columns
1
k
2
a
MAM283
The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
MARKING
TYPE NUMBER
PMEG2005AEA
PMEG3005AEA
PMEG4005AEA
RELATED PRODUCTS
TYPE NUMBER
PMEGxx05AEV
PMEG2005EB
PMEG2010EA
DESCRIPTION
0.5 A; 20 V very low V
F
MEGA Schottky rectifier
1 A; 20 V very low V
F
MEGA Schottky rectifier
FEATURE
smaller SOD523 (SC-79) package
higher forward current
MARKING CODE
E5
E4
E3
0.5 A; 20/30/40 V very low V
F
MEGA Schottky rectifier SOT666 package
2003 Aug 20
2
NXP Semiconductors
Product data sheet
Very low V
F
MEGA
Schottky barrier rectifiers
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
PARAMETER
continuous reverse voltage
PMEG2005AEA
PMEG3005AEA
PMEG4005AEA
I
F
I
FRM
I
FSM
T
j
T
amb
T
stg
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F(AV)
rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10
×
10 mm.
4. Solder point of cathode tab.
PARAMETER
thermal resistance from junction to
ambient
thermal resistance from junction to
soldering point
CONDITIONS
in free air; notes 1 and 2
in free air; notes 2 and 3
note 4
VALUE
450
210
90
UNIT
K/W
K/W
K/W
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
junction temperature
operating ambient temperature
storage temperature
note 1
t
p
≤
1 ms;
δ ≤
0.5
t
p
= 8 ms; square wave
note 2
note 2
−
−
−
−
−
−
−
−65
−65
20
30
40
0.5
3.5
10
150
+150
+150
V
V
V
A
A
A
°C
°C
°C
CONDITIONS
MIN.
MAX.
UNIT
2003 Aug 20
3
NXP Semiconductors
Product data sheet
Very low V
F
MEGA
Schottky barrier rectifiers
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
PMEG2005AEA PMEG3005AEA PMEG4005AEA
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
TYP.
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
R
continuous reverse
current
V
R
= 10 V; note 1
V
R
= 20 V; note 1
V
R
= 30 V; note 1
V
R
= 40 V; note 1
C
d
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
diode capacitance
V
R
= 1 V; f = 1 MHz
90
150
210
280
355
15
40
−
−
66
MAX.
130
190
240
330
390
40
200
−
−
80
TYP.
90
150
215
285
380
12
−
40
−
55
MAX.
130
200
250
340
430
30
−
150
−
70
TYP.
95
155
220
295
420
7
−
−
30
43
MAX.
130
210
270
350
470
20
−
−
100
50
mV
mV
mV
mV
mV
μA
μA
μA
μA
pF
UNIT
2003 Aug 20
4
RF/Wirelessly
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