Common Cathode
Fast Recovery
Epitaxial Diode (FRED)
V
RSM
V
200
200
V
RRM
V
200
200
DSEK 60-02A
DSEK 60-02AR
A
Type
DSEK 60
I
FAVM
= 2x 34 A
V
RRM
= 200 V
= 35 ns
t
rr
TO-247 AD
Version A
A
C
A
ISOPLUS 247
TM
Version AR
A
C
A
C
A
C (TAB)
TAB
A = Anode, C = Cathode
Symbol
I
FRMS
I
FAVM
I
FRM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 115°C; rectangular, d = 0.5
t
P
< 10
µs;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings per leg
50
34
375
325
350
290
310
530
510
420
400
-40...+150
150
-40...+150
T
C
= 25°C
Mounting torque with screw M3
Mounting torque with screw M3.5
125
0.45-0.55/4-5
0.45-0.55/4-5
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
W
Nm/lb.in.
Nm/lb.in.
Features
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behavior
Epoxy meets UL 94V-0 flammability
classification
Version AR isolated and
UL registered E153432
D1
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
t
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
P
tot
M
d
*
Applications
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
V
ISOL
**
Weight
50/60 Hz, RMS, t = 1 minute, leads-to-tab
2500
6
V~
g
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
* Verson A only; ** Version AR only
Symbol
I
R
Test Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A;
V
R
V
R
V
R
T
VJ
T
VJ
= V
RRM
= 0.8 • V
RRM
= 0.8 • V
RRM
= 150°C
= 25°C
Characteristic Values per leg
typ.
max.
200
50µA
5 mA
0.85
1.10
0.72
4.2
1 K/W
K/W
50ns
5A
µA
V
F
V
T0
r
T
mΩ
R
thJC
R
thCH
t
rr
I
RM
V
V
V
For power-loss calculations only
T
VJ
= T
VJM
0.5
I
F
= 1 A; -di/dt = 100 A/µs; V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 30 A; -di
F
/dt = 100 A/µs
L
≤
0.05
µH;
T
VJ
= 25°C
35
4
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747 refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 1999 IXYS All rights reserved
D1 - 35
839
DSEK 60, 200V
120
A
100
I
F
80
60
40
20
0
0.0
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
0.8
Q
r
µC
0.6
T
VJ
= 100°C
V
R
= 100V
30
T
VJ
= 100°C
A
V = 100V
R
25
I
RM
20
0.4
I
F
= 15A
I
F
= 35A
I
F
= 70A
I
F
= 15A
I
F
= 35A
I
F
= 70A
15
10
0.2
5
0.0
10
0
0.4
0.8
V
F
1.2 V
100
A/µs 1000
-di
F
/dt
0
200
400
600 A/µs 1000
800
-di
F
/dt
Fig. 1
Forward current I
F
versus V
F
Fig. 2
Q
r
70
ns
60
t
rr
50
40
Typ. reverse recovery charge
versus -di
F
/dt
T
VJ
= 100°C
V
R
= 100V
Fig. 3
Typ. peak reverse current I
RM
versus -di
F
/dt
T
VJ
= 100°C
I
F
= 35A
V
FR
D1
1.6
1.4
K
f
1.2
1.0
6
V
5
V
FR
4
3
t
fr
1.8
µs
1.5
t
fr
1.2
0.9
0.6
0.3
0.0
A/µs
800
30
0.8
0.6
0.4
I
RM
Q
r
20
10
0
I
F
= 15A
I
F
= 35A
I
F
= 70A
2
1
0
0
40
80
120 °C 160
T
VJ
0
200
400
600 A/µs
800
-di
F
/dt
1000
0
200
400
600
di
F
/dt
Fig. 4
Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5
Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6
Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
2.2
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.54
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
1.2
K/W
1.0
0.8
Z
thJC
0.6
0.4
0.2
0.0
0.001
DSEK 60-02
Dimensions
N
0.01
0.1
1
t
s
10
Fig. 7
Transient thermal impedance junction to case
831
© 1999 IXYS All rights reserved
D1 - 36