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P6KE13A

Description
transient voltage suppression diode
CategoryDiscrete semiconductor    diode   
File Size179KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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P6KE13A Overview

transient voltage suppression diode

Features

Product Name: Transient Voltage Suppressor Diode


Product model: P6KE13A


product features:


Plastic package has Underwriters Laboratory Flammability Classification 94V-0


Exceeds environmental standards of MIL-STD-19500


600W surge capability at 10 x 100us waveform,duty cycle: 0.01%


Excellent clamping capability


Low zener impedance


Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional


Typical IR less than 1uA above 10V


High temperature soldering guaranteed:2500C/ 10 seconds/.375",(9.5mm) lead length / 5lbs.,(2.3kg) tension



Mechanical data:


Cases: Molded plastic


Epoxy:UL94V-0 rate flame retardant


Lead :Axial leads, solderable per MIL- STD-202, Method 208


Polarity: Color band denotes cathode except Bipolar


Weight: 0.34 gram



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.



product data:


Peak Power Dissipation at TA=25℃, TP=1ms PPK Forward power consumption: Minimun 600W


Steady State Power Dissipation at TL=25℃ PD stable power consumption: 2.0W


Peak Forward Surge Current IFSM Forward pulse current: 100A


Maximum Instaneous Forward Voltage at 50A for Unidirectional Only VF Forward Voltage Drop: 3.5 /5.0V


Operating and Storage Temperature Range Tj. Tstg Operating Junction Temperature: -55 to +175℃


Nominal Voltage: 13V


Breakdown Voltage V(BR) Breakdown Voltage: Min: 12.4V Max: 13.7V


Test Current at IT Test current: 1.0mA


Stand-Off Voltage Vwm Stand-Off Voltage: 11.1V


Max Reverse Leakage at Vwm ID Maximum reverse leakage current: 5.0uA


Max Peak Pulse Current IPPM Maximum peak pulse current: 34A


Max Clamping Voltage at IPPM VC 最大箝位电压:18.2V


Maximum Temperature Coefficient of VBR: 0.081%/℃



Package: DO-15


P6KE13A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codecompli
Other featuresEXCELLENT CLAMPING CAPABILITY, Bulk; 500
Maximum breakdown voltage13.7 V
Minimum breakdown voltage12.4 V
Breakdown voltage nominal value13.05 V
Shell connectionISOLATED
Maximum clamping voltage18.2 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Maximum forward voltage (VF)3.5 V
JEDEC-95 codeDO-204AC
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Maximum repetitive peak reverse voltage11.1 V
Maximum reverse current5 µA
Reverse test voltage11.1 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL

P6KE13A Preview

Download Datasheet
P6KE SERIES
瞬变电压抑制二极管
Transient Voltage Suppressor Diodes
■特征
Features
■外½尺寸和印记
Outline Dimensions and Mark
P
PP
600W
V
BR
6.8V-540V
1.0(25.4)
MIN
DO-204AC(DO-15)
.300(7.60)
.230(5.80
1.0(25.4)
MIN
.034(0.86)
.028(0.71)
DIA
Dimensions in inches and (millimeters)
■用途  Applications
 
●箝½电压用  Clamping
Voltage
.140(3.60)
.104(2.60)
DIA
■极限值(绝对最大额定值)
 
Limiting Values (Absolute Maximum Rating)
参数名称
Item
最大损耗功率
Peak power dissipation
最大脉冲电流
Peak pulse current
功率损耗
Power dissipation
最大正向浪涌电流
Peak forward surge current
工½结温和存储温度范围
Operating junction and
temperature range
符号
Symbol
PPPM
IPPM
PD
IFSM
storage TJ,TSTG
单½
Unit
W
A
W
A
条件
Conditions
在10/1000us 波½下测试
with a 10/1000us waveform
在10/1000us 波½下测试
with a 10/1000us waveform
无限散热片@
TL=75℃
on infinite heat sink at TL=75℃
8.3ms正弦半波,仅单向型
8.3 ms single half sine-wave unidirectional only
最大值
Max
600
见下面表格
See Next Table
5
100
-55 to +175
■电特性 (T
a=25
除非另有规定)
Electrical Characteristics(Ta=25
Unless otherwise specified)
参数名称
Item
符号
Symbol
VF
单½
Unit
V
条件
Conditions
最大值
Max
3.5/5.0
最大瞬间正向电压(1)
Maximum instantaneous forward
Voltage(1)
在25A下测试,仅单向型
at 25A for unidirectional only
结到引线
junction to lead
结到环境
junction to ambient
典型热阻
Thermal resistance
R
θJL
R
θJA
℃/W
℃/W
20
75
备注:Notes:
1. VF=3.5V适用于P6KE220(A)及其以下型号;VF=5.0V适用于P6KE250(A)及其以上型号
VF = 3.5 V for P6KE220(A) and below; VF = 5.0 V for P6KE250(A) and above
Document Number 0235
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技½股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd. 
www.21yangjie.com
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