MMBD2836LT1 datasheet, PDF - EEWORLD Datasheet

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MMBD2836LT1: DescriptionRectifier Diode, 2 Element, 0.05A, 75V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size62KB，2 Pages; ManufacturerShandong Yiguang Electronic Joint Stock Co., Ltd.

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MMBD2836LT1 Overview

Rectifier Diode, 2 Element, 0.05A, 75V V(RRM), Silicon,

MMBD2836LT1 Parametric

Parameter Name	Attribute value
Maker	Shandong Yiguang Electronic Joint Stock Co., Ltd.
package instruction	R-PDSO-G3
Reach Compliance Code	unknown
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Maximum output current	0.05 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.225 W
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL

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SEMICONDUCTOR

Shandong Yiguang Electronic Joint stock Co., Ltd

MMBD2835/6LT1

MONOLITHIC DUAL SWITCHING DIODE

TECHNICAL DATA

Package:

SOT-23

ABSOLUTE MAXIMUM RATINGS at Ta=25℃

Characteristic

Symbol

Rating

2835

Reverse Voltage

Forward Current

Total

Device

Dissipation

100

225

2836

100

225

Vdc

mAdc

Unit

FR-5 Board(Note)

Derate above 25℃

Junction Temperature

Storage Temperature

Tstg

1.8

150

-55-150

1.8

150

-55-150

mW/℃

℃

ELECTRICAL CHARACTERISTICS at Ta=25℃

Characteristic

Reverse Breakdown Voltage(I

=100uAdc)

MMBD2835

MMBD2836

Reverse Voltage Leakage Current

=30Vdc)

=50Vdc)

Diode Capacitance(V

=0 f=1.0MHz)

Forward Voltage(I

=10mAdc)

=50mAdc)

=100mAdc)

Reverse Recovery Time(IF=IR=10mAdc)

Trr

MMBD2835

MMBD2836

4.0

1.0

1.2

4.0

Vdc

100

nAdc

Symbol

(BR)

Min

Max

Unit

Vdc

Note:FR-5=1.0ⅹ0.75ⅹ0.062in

DVICE MARKING:

MMBD2835LT1=A3X

MMBD2836LT1=A2X

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