SID01L60
Elektronische Bauelemente
1A, 600V,R
DS(ON)
12
Ω
N-Channel Enhancement Mode Power Mos.FET
Description
The SID01L60 (through-hole
version)
is universally preferred for all
commercial-industrial surface mount applications and
suited for AC/DC converters.
5.6
±0.2
6.6
±0.2
5.3
±0.2
TO-251
2.3
±0.1
0.5
±0.05
7.0
±0.2
Features
*
RoHs Compliant
1.2
±0.3
0.75
±0.15
7.0
±0.2
*
Simple Drive Requirement
*
Fast Switching
Speed
*
Repetitive Avalanche Rated
0.6
±0.1
2.3
REF.
0.5
±0.1
G
D
S
Dimensions in millimeters
D
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,V
GS
@10V
Continuous Drain Current,V
GS
@10V
Pulsed Drain Current
1
Symbol
V
DS
V
GS
I
D
@T
C
=25
C
I
D
@T
C
=100
C
I
DM
P
D
@T
C
=25
C
o
o
o
Ratings
600
±30
1
0.8
3
29
0.232
Unit
V
V
A
A
A
W
W/ C
o
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
2
E
AS
I
AR
E
AR
Tj, Tstg
0.5
1
0.5
-55~+150
mJ
A
mJ
o
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
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Symbol
Max.
Max.
Rthj-c
Rthj-a
Ratings
4.3
110
o
o
Unit
C /W
C /W
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
4
SID01L60
Elektronische Bauelemente
1A, 600V,R
DS(ON)
12
Ω
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current(Tj=150
C
)
Static Drain-Source On-Resistance
3
o
o
o
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
R
D S (O N )
Gfs
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Min.
600
_
Typ.
_
Max.
_
Unit
V
V/ C
V
nA
uA
uA
Ω
o
Test Condition
V
GS
=0V, I
D
=250uA
Reference to 25 C, I
D
=1mA
V
DS
=V
GS,
I
D
=250uA
V
GS
=
±
30V
V
DS
=60 0V,V
GS
=0
V
DS
=480 V,V
GS
=0
V
GS
=10V, I
D
=0.5A
V
DS
=10V, I
D
=0.5A
I
D
=1 A
V
DS
=480V
V
GS
= 10V
o
0.8
_
_
_
_
_
_
2.0
_
_
_
_
4.0
±
100
10
100
12
_
_
_
_
Forward Transconductance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
_
_
_
_
_
_
_
_
_
_
_
0.8
4
1
1.1
6.6
5
11.7
9.2
170
30.7
5.1
S
nC
_
_
_
_
_
_
_
V
DD
=300V
I
D
=1 A
nS
V
GS
=10V
R
G
=3.3
Ω
R
D
=300
Ω
pF
V
GS
=0V
V
DS
=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage
3
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)
1
Symbol
V
SD
I
S
Min.
_
_
Typ.
_
_
_
Max.
1.2
Unit
V
A
A
Test Condition
I
S
=1A, V
GS
=0V.Tj=25C
V
D
=V
G
=0V,V
S
=1.2 V
o
1
5
I
SM
_
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 : , V
DD
=50V, L=10mH, R
G
=25 Ł , I
AS
=1.0A.
3. Pulse width 300us, duty cycle 2%.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of
4
SID01L60
Elektronische Bauelemente
1A, 600V,R
DS(ON)
12
Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page
3
of
4
SID01L60
Elektronische Bauelemente
1A, 600V,R
DS(ON)
12
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page
4
of
4
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