SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BC846A-BC848C
TECHNICAL DATA
NPN EPITAXIAL SILICON TRANSISTO
R
SURFACE MOUNT SMALL SIGNAL TRANSISTORS
Package:
SOT-23
*
Epitaxial Die Construction
*
Ideally Suited Automatic Insertion
*
310mW Power Dissipation
*
Complementary PNP types Available(BC856-BC858)
*
For Switching and AF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
BC846
BC847
BC848
Collector-Emitter Voltage
BC846
BC847
BC848
Emitter-Base Voltage
BC846
BC847
BC848
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Ic
P
D
Tj
Tstg
Vebo
Vceo
Vcbo
Symbol
Rating
80
50
30
NO.1
B
E
C
Unit
PIN:
1
2
3
V
STYLE
65
45
30
6.0
6.0
5.0
100
310
150
-65-150
mA
mW
℃
℃
V
V
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
BC846
BC847
BC848
Collector-Emitter Breakdown Voltage BC846
BC847
BC848
Collector-Emitter Saturation Voltage
Vce(sat)
BVceo
Symbol
BVcbo
Min
80
50
-30
65
45
30
90
200
Base-Emitter Saturation Voltage
Vbe(sat)
700
900
Base-Emitter Voltage
Vbe
580
660
770
720
mV
250
600
mV
mV
Ic=10mA Ib=0.5mA
Ic=100mA Ib=5.0mA
Ic=10mA Ib=0.5mA
Ic=100mA Ib=5.0mA
Vce=5.0V Ic=2.0mA
Vce=5.0V Ic=10mA
V
Ic= 10mA Ib=0
Typ
Max
Unit
V
Test Conditions
Ic=10uA
Ie=0
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BC846A-BC848C
TECHNICAL DATA
NPN EPITAXIAL SILICON TRANSISTO
R
SURFACE MOUNT SMALL SIGNAL TRANSISTORS
ELECTRICAL CHARACTERISTICS at Ta=25℃(CONTINUED)
Characteristic
DC Current Gain
Current Gain GroupA
B
C
Current Gain GroupA
B
C
Collector-Emitter Cutoff Current BC846
BC847
BC848
BC846
BC847
BC848
I
CES
I
CES
I
CES
I
CES
I
CES
I
CES
I
CBO
I
CBO
Collector-Base Capacitance
Emitter-Base Capacitance
Gain Bandwidth Product
Noise Figure
Ccbo
Cebo
fT
NF
3.5
9.0
300
2.0
10
H
FE
110
200
420
Symbol
Min
Typ
90
150
270
180
290
520
0.2
0.2
0.2
220
450
800
15
15
15
4.0
4.0
4.0
15
5.0
6.0
nA
nA
nA
uA
uA
uA
nA
uA
PF
PF
MHz
dB
Vce=80V
Vce=50V
Vce=30V
Vce=80V ,Tj=125℃
Vce=50V ,Tj=125℃
Vce=30V ,Tj=125℃
Vcb=30V
Vcb=30V ,Tj=125℃
Vcb=10V
Veb=0.5V
f=1MHz
f=1MHz
Vce=5.0V Ic=10uA
Vce=5.0V Ic=2.0mA
Max
Unit
Test Conditions
Vce=5V Ic=10mA f=100MHz
Vce=5V Ic=200uA R
G
=2KΩ
f=1MHz
△f=200Hz
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle
≤2%
DEVICE MARKING:
BC846ALT1=1A
BC846BLT1=1B
BC847ALT1=1E
BC847BLT1=1F
BC847CLT1=1G
BC848ALT1=1J
BC848BLT1=1K
BC848CLT1=1L
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BC846A-BC848C
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ＢＣ８４７ＢＬＴ１
Fig.1 Grounded emitter propagation characteristics
50
Fig.2 Grounded emitter output characteristics( )
100
0.50mA
T
A
= 25°C
V
CE
= 6 V
20
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
80
10
50
T
A
= 100°C
25°C
60
2
1
– 55°C
40
0.5
20
0.2
0.1
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
0
0
0.4
0.8
1.2
1.6
2.0
V
BE
, BASE TO EMITTER VOLTAGE(V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Fig.3 Grounded emitter output characteristics( )
10
Fig.4 DC current gain vs. collector current ( )
500
I
C
, COLLECTOR CURRENT (mA)
8
6
h
FE
, DC CURRENT GAIN
0
4
8
12
16
20
200
100
4
50
2
20
0
10
0.2
0.5
1
2
5
10
20
50
100
200
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
Fig.5 DC current gain vs. collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
Fig.6 Collector-emitter saturation voltage vs.
collector current
0.5
500
0.2
h
FE
, DC CURRENT GAIN
200
0.1
100
0.05
50
0.02
20
0.01
0.2
0.5
1
2
5
10
20
50
100
200
10
0.2
0.5
1
2
5
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BC846A-BC848C
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ＢＣ８４７ＢＬＴ１
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
0.5
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
0.01
0.2
0.5
1
2
5
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig.9 Gain bandwidth product vs. emitter current
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
C
ob
, COLLECTOR OUTPUT CAPACITANCE( pF)
C
ib
, EMITTER INPUT CAPACITANCE (pF)
20
f
r
, TRANSITION FREQUENCY(MHz)
500
10
200
5
100
2
50
–0.5
–1
–2
–5
–10
–20
–50
–100
1
0.2
0.5
1
2
5
10
20
50
I
E
, EMITTER CURRENT (mA)
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
Fig.11 Base-collector time constant vs.emitter current
C c
-
r
bb
, BASE COLLECTOR TIME CONSTANT( ps)
200
100
50
20
10
–0.2
–0.5
–1
–2
–5
–10
I
E
, EMITTER CURRENT (mA)
Power technology
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