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BDS12-JQR-B

Description
Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, TO-220SM, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size61KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BDS12-JQR-B Overview

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, TO-220SM, 3 PIN

BDS12-JQR-B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionTO-220SM, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)15 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-CBCC-N3
Number of components1
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz

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