PRELIMINARY
Am29DL640G
64 Megabit (8 M x 8-Bit/4 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
■
Flexible Bank
TM
architecture
— Read may occur in any of the three banks not being
written or erased.
— Four banks may be grouped by customer to achieve
desired bank divisions.
■
Boot Sectors
— Top and bottom boot sectors in the same device
— Any combination of sectors can be erased
■
Manufactured on 0.17 µm process technology
■
SecSi™ (Secured Silicon) Sector: Extra 256 Byte
sector
—
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
—
Customer lockable:
One-time programmable only.
Once locked, data cannot be changed
■
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
■
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■
Minimum 1 million write cycles guaranteed per
sector
■
20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
■
Supports Common Flash Memory Interface (CFI)
■
Erase Suspend/Erase Resume
— Suspends erase operations to allow reading from
other sectors in same bank
■
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
■
WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1,
140, and 141, regardless of sector protect status
— Acceleration (ACC) function accelerates program
timing
■
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
PACKAGE OPTIONS
■
63-ball Fine Pitch BGA
■
64-ball Fortified BGA
■
48-pin TSOP
PERFORMANCE CHARACTERISTICS
■
High performance
— Access time as fast as 65 ns
— Program time: 4 µs/word typical utilizing Accelerate
function
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication#
25693
Rev:
A
Amendment/+2
Issue Date:
June 7, 2002
Refer to AMD’s Website (www.amd.com) for the latest information.
P R E L I M I N A R Y
GENERAL DESCRIPTION
The Am29DL640G is a 64 megabit, 3.0 volt-only flash
memory device, organized as 4,194,304 words of 16
bits each or 8,388,608 bytes of 8 bits each. Word
mode data appears on DQ15–DQ0; byte mode data
appears on DQ7–DQ0. The device is designed to be
programmed in-system with the standard 3.0 volt V
CC
supply, and can also be programmed in standard
EPROM programmers.
The device is available with an access time of 65, 70,
90, or 120 ns and is offered in 48-pin TSOP, 63-ball
Fine-Pitch BGA, and 64-ball Fortified BGA packages.
Standard control pins—chip enable (CE#), write en-
able (WE#), and output enable (OE#)—control normal
read and write operations, and avoid bus contention
issues.
The device requires only a
single 3.0 volt power sup-
ply
for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
Factory locked parts provide several options. The
SecSi Sector may store a secure, random 16 byte
ESN (Electronic Serial Number), customer code (pro-
grammed through AMD’s ExpressFlash service), or
both. Customer Lockable parts may utilize the SecSi
Sector as bonus space, reading and writing like any
other flash sector, or may permanently lock their own
code there.
DMS (Data Management Software)
allows systems
to easily take advantage of the advanced architecture
of the simultaneous read/write product line by allowing
removal of EEPROM devices. DMS will also allow the
system software to be simplified, as it will perform all
functions necessary to modify data in file structures,
as opposed to single-byte modifications. To write or
update a particular piece of data (a phone number or
configuration data, for example), the user only needs
to state which piece of data is to be updated, and
where the updated data is located in the system. This
i s an a dv a n ta g e c o m p a re d to s y s te m s w he r e
user-written software must keep track of the old data
location, status, logical to physical translation of the
data onto the Flash memory device (or memory de-
vices), and more. Using DMS, user-written software
does not need to interface with the Flash memory di-
rectly. Instead, the user's software accesses the Flash
memory by calling one of only six functions. AMD pro-
vides this software to simplify system design and soft-
ware integration efforts.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard.
Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device
sta-
tus bits:
RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to the read mode.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via program-
ming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode.
The sys tem can also place the device into the
standby mode.
Power consumption is greatly re-
duced in both modes.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation
by dividing the memory
space into
four banks,
two 8 Mb banks with small and
large sectors, and two 24 Mb banks of large sectors.
Sector addresses are fixed, system software can be
used to form user-defined bank groups.
During an Erase/Program operation, any of the three
non-busy banks may be read from. Note that only two
banks can operate simultaneously. The device can im-
prove overall system performance by allowing a host
sys tem to program or er ase in one bank , then
immediately and simultaneously read from the other
bank, with zero latency. This releases the system from
waiting for the completion of program or erase
operations.
The Am29DL640G can be organized as both a top
and bottom boot sector configuration.
Bank
Bank 1
Bank 2
Bank 3
Bank 4
Megabits
8 Mb
24 Mb
24 Mb
8 Mb
Sector Sizes
Eight 8 Kbyte/4 Kword,
Fifteen 64 Kbyte/32 Kword
Forty-eight 64 Kbyte/32 Kword
Forty-eight 64 Kbyte/32 Kword
Eight 8 Kbyte/4 Kword,
Fifteen 64 Kbyte/32 Kword
Am29DL640G Features
The
SecSi™ (Secured Silicon) Sector
is an extra
256 byte sector capable of being permanently locked
by AMD or customers. The
SecSi Indicator Bit
(DQ7)
is permanently set to a 1 if the part is
factory locked,
and set to a 0 if
customer lockable.
This way, cus-
tomer lockable parts can never be used to replace a
factory locked part.
2
Am29DL640G
June 7, 2002
P R E L I M I N A R Y
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 6
Special Handling Instructions for BGA Packages ..................... 6
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 9
Table 1. Am29DL640G Device Bus Operations ................................9
Erase Suspend/Erase Resume Commands ........................... 26
Figure 4. Erase Operation.............................................................. 26
Table 12. Am29DL640G Command Definitions ............................. 27
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 28
DQ7: Data# Polling ................................................................. 28
Figure 5. Data# Polling Algorithm .................................................. 28
RY/BY#: Ready/Busy#............................................................ 29
DQ6: Toggle Bit I .................................................................... 29
Figure 6. Toggle Bit Algorithm........................................................ 29
Word/Byte Configuration .......................................................... 9
Requirements for Reading Array Data ..................................... 9
Writing Commands/Command Sequences ............................ 10
Accelerated Program Operation ............................................. 10
Autoselect Functions .............................................................. 10
Simultaneous Read/Write Operations with Zero Latency ....... 10
Standby Mode ........................................................................ 10
Automatic Sleep Mode ........................................................... 11
RESET#: Hardware Reset Pin ............................................... 11
Output Disable Mode .............................................................. 11
Table 2. Am29DL640G Sector Architecture ....................................11
Table 3. Bank Address ....................................................................14
Table 4. SecSi
TM
Sector Addresses ................................................14
DQ2: Toggle Bit II ................................................................... 30
Reading Toggle Bits DQ6/DQ2 ............................................... 30
DQ5: Exceeded Timing Limits ................................................ 30
DQ3: Sector Erase Timer ....................................................... 30
Table 13. Write Operation Status ................................................... 31
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 32
Figure 7. Maximum Negative Overshoot Waveform ...................... 32
Figure 8. Maximum Positive Overshoot Waveform........................ 32
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 9. I
CC1
Current vs. Time (Showing Active and
Automatic Sleep Currents) ............................................................. 34
Figure 10. Typical I
CC1
vs. Frequency ............................................ 34
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 11. Test Setup.................................................................... 35
Figure 12. Input Waveforms and Measurement Levels ................. 35
Autoselect Mode..................................................................... 14
Table 5. Am29DL640G Autoselect Codes, (High Voltage Method) 15
Sector/Sector Block Protection and Unprotection .................. 16
Table 6. Am29DL640G Boot Sector/Sector Block Addresses for
Protection/Unprotection ...................................................................16
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 36
Read-Only Operations ........................................................... 36
Figure 13. Read Operation Timings ............................................... 36
Hardware Reset (RESET#) .................................................... 37
Figure 14. Reset Timings ............................................................... 37
Write Protect (WP#) ................................................................ 17
Table 7. WP#/ACC Modes ..............................................................17
Word/Byte Configuration (BYTE#) .......................................... 38
Figure 15. BYTE# Timings for Read Operations............................ 38
Figure 16. BYTE# Timings for Write Operations............................ 38
Temporary Sector Unprotect .................................................. 17
Figure 1. Temporary Sector Unprotect Operation........................... 17
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 18
Erase and Program Operations .............................................. 39
Figure 17. Program Operation Timings..........................................
Figure 18. Accelerated Program Timing Diagram..........................
Figure 19. Chip/Sector Erase Operation Timings ..........................
Figure 20. Back-to-back Read/Write Cycle Timings ......................
Figure 21. Data# Polling Timings (During Embedded Algorithms).
Figure 22. Toggle Bit Timings (During Embedded Algorithms)......
Figure 23. DQ2 vs. DQ6.................................................................
40
40
41
42
42
43
43
SecSi™ (Secured Silicon) Sector
Flash Memory Region ............................................................ 19
Hardware Data Protection ...................................................... 19
Low VCC Write Inhibit ............................................................ 19
Write Pulse “Glitch” Protection ............................................... 20
Logical Inhibit .......................................................................... 20
Power-Up Write Inhibit ............................................................ 20
Common Flash Memory Interface (CFI) . . . . . . . 20
Table 8. CFI Query Identification String .......................................... 20
Table 9. System Interface String......................................................21
Table 10. Device Geometry Definition ............................................ 21
Table 11. Primary Vendor-Specific Extended Query ...................... 22
Temporary Sector Unprotect .................................................. 44
Figure 24. Temporary Sector Unprotect Timing Diagram .............. 44
Figure 25. Sector/Sector Block Protect and
Unprotect Timing Diagram ............................................................. 45
Alternate CE# Controlled Erase and Program Operations ..... 46
Figure 26. Alternate CE# Controlled Write (Erase/Program)
Operation Timings.......................................................................... 47
Command Definitions . . . . . . . . . . . . . . . . . . . . . 23
Reading Array Data ................................................................ 23
Reset Command ..................................................................... 23
Autoselect Command Sequence ............................................ 23
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence .............................................................. 23
Byte/Word Program Command Sequence ............................. 24
Unlock Bypass Command Sequence ..................................... 24
Figure 3. Program Operation .......................................................... 25
Chip Erase Command Sequence ........................................... 25
Sector Erase Command Sequence ........................................ 25
Erase And Programming Performance. . . . . . . . 48
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 48
TSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 48
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
FBE063—63-Ball Fine-Pitch Ball Grid Array (FBGA)
12 x 11 mm package .............................................................. 49
LAA064—64-Ball Fortified Ball Grid Array (FBGA)
13 x 11 mm package .............................................................. 50
TS 048—48-Pin Standard TSOP ............................................ 51
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 52
June 7, 2002
Am29DL640G
3
P R E L I M I N A R Y
PRODUCT SELECTOR GUIDE
Part Number
Speed Option
Standard Voltage Range: V
CC
= 2.7–3.6 V
65
65
65
30
Am29DL640G
70
70
70
30
90
90
90
35
120
120
120
50
Max Access Time (ns), t
ACC
CE# Access (ns), t
CE
OE# Access (ns), t
OE
BLOCK DIAGRAM
V
CC
V
SS
OE# BYTE#
Mux
A21–A0
Bank 1 Address
Bank 1
Y-gate
X-Decoder
A21–A0
RY/BY#
Bank 2 Address
Bank 2
X-Decoder
DQ15–DQ0
A21–A0
RESET#
WE#
CE#
BYTE#
WP#/ACC
DQ0–DQ15
A21–A0
X-Decoder
Bank 3 Address
STATE
CONTROL
&
COMMAND
REGISTER
Status
DQ15–DQ0
Control
DQ15–DQ0
Mux
Bank 3
Y-gate
X-Decoder
A21–A0
Mux
Bank 4 Address
Bank 4
4
Am29DL640G
DQ15–DQ0
DQ15–DQ0
June 7, 2002
P R E L I M I N A R Y
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
V
SS
CE#
A0
48-Pin Standard TSOP
A8
NC
A7
NC
B8
NC
B7
NC
C7
A13
C6
A9
C5
WE#
C4
D7
A12
D6
A8
D5
RESET#
D4
63-Ball Fine-Pitch BGA (FBGA)
Top View, Balls Facing Down
L8
NC*
M8
NC*
M7
NC*
E7
A14
E6
A10
E5
A21
E4
A18
E3
A6
E2
A2
F7
A15
F6
A11
F5
A19
F4
A20
F3
A5
F2
A1
G7
A16
G6
DQ7
G5
DQ5
G4
DQ2
G3
DQ0
G2
A0
H7
J7
K7
V
SS
K6
DQ6
K5
DQ4
K4
DQ3
K3
DQ1
K2
V
SS
L7
NC*
BYTE# DQ15/A-1
H6
DQ14
H5
DQ12
H4
DQ10
H3
DQ8
H2
CE#
J6
DQ13
J5
V
CC
J4
DQ11
J3
DQ9
J2
OE#
RY/BY# WP#/ACC
C3
A7
A2
NC*
A1
NC*
B1
C2
A3
D3
A17
D2
A4
L2
NC*
L1
M2
NC*
M1
NC*
* Balls are shorted together via the substrate but not connected to the die.
NC*
NC*
June 7, 2002
Am29DL640G
5
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