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CMPFCD86GN220

Description
PFC Diode (8A/600V)
CategoryDiscrete semiconductor    diode   
File Size149KB,5 Pages
ManufacturerChampion Microelectronic Corp.
Power control management IC chips are the primary key to improving the power saving performance of electronic facilities and products. Backed by the most advanced technology in Silicon Valley, U.S., Hongguan Electronics has invested in AC-DC analog power IC professional design for many years, and has always adhered to the concept of implementing energy conservation and carbon reduction, striving for a green world, so that energy saving and power saving performance can be fully realized in people's lives around the world.
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CMPFCD86GN220 Overview

PFC Diode (8A/600V)

CMPFCD86GN220 Parametric

Parameter NameAttribute value
MakerChampion Microelectronic Corp.
package instructionR-PSFM-T2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current90 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage600 V
Maximum reverse current10 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

CMPFCD86GN220 Preview

Download Datasheet
CMPFCD86
PFC Diode
(8A/600V)
FEATURES
Fast switching for high efficiency
Low noise
Trr = 20ns
Low reverse leakage current
High voltage super FRD
PFC application
MECHANICAL DATA
Case : Molded plastic TO-220AC / TO-220FP
Epoxy : UL94V-0 rate flame retardant
Terminals : Solder able per MIL-STD-202 method 208
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave , 60Hz , resistive or inductive load.
For capacitive load , derate current by 20%
CMPFCD86
Rating
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
I
FSM
V
F
I
R
Trr
C
J
R
θJC
I t
T
J
T
STG
2
Symbol
Characteristics
Recurrent Peak Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Forward Rectified Current @Tc=140℃
Peak Forward Surge Current
8.3ms single half sine-wave
Super imposed on rated load (JEDEC Method)
Peak Forward Surge Current 1.0ms single
Square-wave superimposed on rated load (JEDEC Method)
Instantaneous Forward Voltage @8A
DC Reverse Current @T
J
=25℃
At Rated DC Blocking Voltage
@T
J
=150℃
Maximum Reverse Recovery Time
Typical Junction Capacitance
Typical Thermal Resistance
I t Value For Fusing
Operating Temperature Range
Storage Temperature Range
2
Unit
V
V
V
A
A
A
V
uA
nS
pF
℃/
W
A s
2
600
420
600
8.0
100
150
2.9
10
500
20
50
2.2
91
-65~175
-65~175
(note1)
(note2)
(note3)
Tp=10ms
Notes :
1. Reverse recovery test conditions I
F
=0.5A , I
R
=1.0A , Irr=0.25A
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts DC.
3. Thermal Resistance junction to case.
2011/09/13 Rev1.6
Champion Microelectronic Corporation
Page 1

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