PCMCIA Flash Memory Card
FLE Series
PCMCIA Flash Memory Card
General Description
WEDC’s PCMCIA Flash memory cards offer the
highest density, linear Flash solid state storage
solutions for code and data storage, high performance
disk emulation and execute in place (XIP) applications
in mobile PC and dedicated (embedded) equipment.
Packaged in a PCMCIA type I housing, each card
contains a connector, an array of Flash memories
packaged in TSOP packages and card control logic.
The card control logic provides the system interface
and controls the internal Flash memories. Combined
with file management software, such as Flash
Translation Layer (FTL), WEDC Flash cards provide
removable high-performance disk emulation.
The WEDC FLE series is based on AMD Flash
memories. The FLE series offers byte wide and word
wide
operation,
low
power
modes
and
Card
Information Structure (CIS) for easy identification of
card characteristics.
Note: Standard options include attribute memory.
Cards without attribute memory are available. Cards
are also available with or without a hardware write
protect switch.
• 1,000,000 Erase Cycles per Block
• 64K word (128kB) symmetrical Block Architecture
• PC Card Standard Type I Form Factor
• High Performance Random Writes
- 7µs Typical Word Write Time
• Automated Write and Erase Algorithms
- AMD Command Set
•Fast Read Performance
- 150ns Maximum Access Time
• x8/ x16 Data Interface
8 MEGABYTE through 64 MEGABYTE (AMD based)
Features
•
Very High Density Linear Flash Card
• Supports 5V only systems
•Based on AMD Flash Components
-low standby power without entering reset mode
-allows standard access from standby mode
Architecture Overview
WEDC’s FLE series is designed to support up to twenty (see Block diagram) 32Mb components, providing a wide
range of density options. Cards are based on the Am29F032 (32Mb) device for 5V only applications. The device
code for the Am29F032 is 41h and the manufacturer’s ID is 01h. Systems should be able to recognize these codes.
Cards utilizing 32Mb components provide densities ranging from 8MB to 64MB in 8MB increments.
In support of the PC Card (PCMCIA) standard for word wide access, devices are paired. Therefore, the Flash array
is structured in 64K word blocks. Write, read and block erase operations can be performed as either a word or byte
wide operation . By multiplexing A0, CE1# and CE2#, 8-bit hosts can access all data on data lines DQ0 - DQ7. The
FLE series cards conform with the PC Card Standard (formerly PCMCIA) and supported JEIDA, providing
electrical and physical compatibility. The PC Card form factor offers an industry standard pinout and mechanical
outline, allowing density upgrades without system design changes.
WEDC’s standard cards are shipped with WEDC’s silkscreen design. Cards are also available with blank housings
(no silkscreen). The blank housings are available in both a recessed (for label) and flat housing. Please contact your
WEDC sales representative for further information on Custom artwork.
August 2000 Rev. 4 - ECO #13129
1
PC Card Products
PCMCIA Flash Memory Card
FLE Series
Block Diagram
Device type Manuf ID Device ID
Am29F032
01
H
41
H
Device Pair (N/2 - 1)
Device (N-1)
Device (N-2)
CSn
Array
Address
Bus
ADDRESS
BUFFER
ADDRESS BUS
A1-A25
Control
Address
Bus
M Res
WL#
RL#
WH#
RH#
CSn
Device 3
Device 2
CS1
CS0
Q2
Q0
Ctrl
At/Reg enable
Control Logic
PCMCIA Interface
Qn
WE#
OE#
CE2#
CE1#
REG#
A0
WP
Device Pair 1
Device Pair 0
Device 1
Device 0
CS0
Vcc
WH# RH#
DATA
BUS
Q8-Q15
DATA
BUS
Q0-Q7
WL# RL#
0000h
attrib. mem
CIS
EEPROM 2kB
Vcc
control
Q0-Q7
Vcc
I/O buffer
DATA
BUS
D8-D15
DATA
BUS
D0-D7
August 2000 Rev. 4 - ECO #13129
2
PC Card Products
PCMCIA Flash Memory Card
FLE Series
Pinout
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Signal name
GND
DQ3
DQ4
DQ5
DQ6
DQ7
CE1#
A10
OE#
A11
A9
A8
A13
A14
WE#
RDY/BSY#
Vcc
Vpp1
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
WP
GND
I/O
I/O
I/O
I/O
I/O
I/O
I
I
I
I
I
I
I
I
I
O
Function
Ground
Data bit 3
Data bit 4
Data bit 5
Data bit 6
Data bit 7
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9
Address bit 8
Address bit 13
Address bit 14
Write Enable
Ready/Busy
Supply Voltage
Prog. Voltage
Address bit 16
Address bit 15
Address bit 12
Address bit 7
Address bit 6
Address bit 5
Address bit 4
Address bit 3
Address bit 2
Address bit 1
Address bit 0
Data bit 0
Data bit 1
Data bit 2
Write Potect
Ground
Active
Pin Signal name
35
GND
36
CD1#
37
DQ11
38
DQ12
39
DQ13
40
DQ14
41
DQ15
42
CE2#
43
VS1
44
RFU
45
RFU
46
A17
47
A18
48
A19
49
A20
50
A21
51
Vcc
52
Vpp2
53
A22
54
A23
55
A24
56
A25
57
VS2
58
RST
59
Wait#
60
RFU
61
REG#
62
BVD2
63
BVD1
64
DQ8
65
DQ9
66
DQ10
67
CD2#
68
GND
I/O
O
I/O
I/O
I/O
I/O
I
I
O
Function
Active
Ground
Card Detect 1
LOW
Data bit 11
Data bit 12
Data bit 13
Data bit 14
Data bit 15
Card Enable 2
LOW
Voltage Sense 1
N.C.
Reserved
Reserved
Address bit 17
Address bit 18
Address bit 19
Address bit 20
Address bit 21
Supply Voltage
Prog. Voltage
N.C.
8MB(3)
Address bit 22
16MB(3)
Address bit 23
32MB(3)
Address bit 24
64MB(3)
Address bit 25
Voltage Sense 2
N.C.
Card Reset
HIGH
Extended Bus cycleLOW(2)
Reserved
Attrib Mem Select
Bat. Volt. Detect 2
(2)
Bat. Volt. Detect 1
(2)
Data bit 8
Data bit 9
Data bit 10
Card Detect 2
LOW
Ground
LOW
LOW
LOW
LOW
N.C.
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I/O
I/O
I/O
O
I
I
I
I
O
I
O
I
O
O
I/O
I/O
O
O
HIGH
Notes:
1. RDY/BSY is an open drain output, external pull-up resistor is required.
2. Wait#, BVD1 and BVD2 are driven high for compatibility.
3. Shows density for which specified address bit is MSB. Higher order address bits are no
connects (i.e., 16MB A23 is MSB A24, A25 are NC).
Mechanical
.063
3.370
.039
2.126
.039
.400
.130
MAX.
August 2000 Rev. 4 - ECO #13129
3
PC Card Products
PCMCIA Flash Memory Card
FLE Series
Card Signal Description
Symbol
A0 - A25
Type
INPUT
Name and Function
ADDRESS INPUTS:
A0 through A25 enable direct addressing of
up to 64MB of memory on the card. Signal A0 is not used in word
access mode. A25 is the most significant bit
DATA INPUT/OUTPUT:
DQ0 THROUGH DQ15 constitute the
bi-directional databus. DQ15 is the MSB.
CARD ENABLE 1 AND 2:
CE1# enables even byte accesses, CE2#
enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows
8-bit hosts to access all data on DQ0 - DQ7.
OUTPUT ENABLE:
Active low signal gating read data from the
memory card.
WRITE ENABLE:
Active low signal gating write data to the
memory card.
READY/BUSY OUTPUT:
Indicates status of internally timed erase
or program algorithms. A high output indicates that the card is ready
to accept accesses. A low output indicates that one or more devices
in the memory card are busy with internally timed erase or write
activities.
CARD DETECT 1 and 2:
Provide card insertion detection. These
signals are connected to ground internally on the memory card. The
host socket interface circuitry shall supply 10K-ohm or larger pull-up
resistors on these signal pins.
WRITE PROTECT:
Write protect reflects the status of the Write
Protect switch on the memory card. WP set to high = write protected,
providing internal hardware write lockout to the Flash array.
If card does not include optional write protect switch, this signal will
be pulled low internally indicating write protect = "off".
PROGRAM/ERASE POWER SUPPLY:
Not connected for 5V
only card.
CARD POWER SUPPLY:
5.0V for all internal circuitry.
GROUND:
for all internal circuitry.
ATTRIBUTE MEMORY SELECT :
provides access to Flash
memory card registers and Card Information Structure in the
Attribute Memory Plane.
RESET:
Active high signal for placing card in Power-on default
state. Reset can be used as a Power-Down signal for the memory
array.
WAIT:
This signal is pulled high internally for compatibility. No
wait states are generated.
BATTERY VOLTAGE DETECT:
These signals are pulled high to
maintain SRAM card compatibility.
VOLTAGE SENSE:
Notifies the host socket of the card's VCC
requirements. VS1 and VS2 are open to indicate a 5V card has been
inserted.
RESERVED FOR FUTURE USE
NO INTERNAL CONNECTION TO CARD:
pin may be driven
or left floating
DQ0 - DQ15
CE1#, CE2#
INPUT/OUTPUT
INPUT
OE#
WE#
RDY/BSY#
INPUT
INPUT
OUTPUT
CD1#, CD2#
OUTPUT
WP
OUTPUT
VPP1, VPP2
VCC
GND
REG#
N.C.
INPUT
RST
INPUT
WAIT#
BVD1, BVD2
VS1, VS2
OUTPUT
OUTPUT
OUTPUT
RFU
N.C.
August 2000 Rev. 4 - ECO #13129
4
PC Card Products
PCMCIA Flash Memory Card
FLE Series
Absolute Maximum Ratings
(2)
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to V
SS
V
CC
supply Voltage relative to V
SS
** Advanced information
0°C to +60°C
-40°C to +85°C **
-30°C to +80°C
-40°C to +85°C **
-0.5V to V
CC
+0.5V (1)
-0.5V to +7.0V
Notes:
(1) During transitions, inputs may undershoot
to -2.0V or overshoot to V
CC
+2.0V for periods
less than 20ns.
(2) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
DC Characteristics
(1)
Sym
I
CCR
I
CCW
I
CCE
I
CCS
(CMOS)
Parameter
V
CC
Read Current
V
CC
Program Current
V
CC
Erase Current
V
CC
Standby Current
Density
(Mbytes)
All
All
All
8MB
64MB
2,3
Notes
Typ
(4)
40
(5)
30
(6)
30
(6)
50
100
Max
75
40
(6)
40
(6)
200
400
Units
mA
mA
mA
µA
V
CC
= V
CC
max
Control Signals = V
CC
Reset = V
SS
, CMOS levels
Test Conditions
V
CC
= V
CC
max
tcycle = 150ns,CMOS levels
CMOS Test Conditions: V
CC
= 5V ± 5%, V
IL
= V
SS
± 0.2V, V
IH
= V
CC
± 0.2V
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Word wide operations.
2. Control Signals: CE
1
#, CE
2
#, OE#, WE#, REG#.
3. ICCS is specified for lowest density card (8MB for two, 32Mb components) This represents a single pair of devices.
4. Typical: V
CC
= 5V, T = +25°C.
5. The Icc current is typically less then 1mA/MHz per device, with with OE not active.
6. Icc active while Embedded Program or Erase algorithm is in progress. Value based on one device active.
Symbol
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
V
LKO
Parameter
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
CC
Erase/Program
Lock Voltage
Notes
1
1
1
1
1
1
1
Min
Max
±20
±20
Units
µA
µA
V
V
V
V
V
Test Conditions
V
CC
= V
CC
MAX
Vin =V
CC
or V
SS
V
CC
= V
CC
MAX
Vout =V
CC
or V
SS
0
0.7V
CC
V
CC
-0.4
2.0
0.8
V
CC
+0.5
0.4
V
CC
IOL = 3.2mA
IOH = -2.0mA
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to
internal pull-up resistors. Leakage currents on RST will be <150µA when VIN=V
CC
due to internal pull-down resistor.
August 2000 Rev. 4 - ECO #13129
5
PC Card Products
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