3-volt, Low Noise Amplifier
for 0.8 – 6 GHz Applications
Technical Data
MGA-85563
Features
• 1.6 dB minimum Noise
Figure at 1.9 GHz
• Adjustable IP3 from
+12 dBm to +17 dBm via
External Resistor
• 18 dB Gain at 1.9 GHz
• Single 3 V Supply
• Unconditionally Stable
Surface Mount Package
SOT-363 (SC-70)
Description
Hewlett-Packard’s MGA-85563 is
an easy-to-use GaAs RFIC
amplifier that offers low noise
figure and high gain from 0.8 to
6 GHz. Packaged in an ultra-
miniature SOT-363 package, it
requires half the board space of a
SOT-143 package.
The MGA-85563 features a
minimum noise figure of 1.6 dB
and associated gain of 18 dB at
1.9 GHz. The output is matched
internally to 50
Ω,
and the input is
partially matched, requiring only
a single external inductor for
optimal performance. The supply
current can be adjusted using an
external resistor, varying IP3
from +12 dBm to +17 dBm.
The circuit uses state-of-the-art
PHEMT technology with proven
reliability. On-chip bias circuitry
allows operation from a single
+3 V supply, while resistive
feedback ensures stability (K > 1)
over frequency and temperature.
Pin Connections and
Package Marking
GND
GND
INPUT
1
2
3
6
5
4
OUTPUT
and V
d
GND
R
bias
Applications
• Amplifier for Cellular, PCS,
and Wireless LAN
Applications
Note:
Package marking provides orientation
and identification; “x” is date code.
85x
Equivalent Circuit
(Simplified)
6
RF OUTPUT
and V
d
3
4
RF
INPUT
BIAS
GROUND
BIAS
R
bias
1, 2, 5
2
MGA-85563 Absolute Maximum Ratings
Symbol
V
d
, max
P
in
T
ch
T
STG
Parameter
Maximum Device Voltage
CW RF Input Power
Channel Temperature
Storage Temperature
Units
V
dBm
°C
°C
Absolute
Maximum
[1]
5.5
+13
150
-65 to 150
Thermal Resistance
[2]
:
θ
ch to c
= 155°C/W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. T
C
= 25°C (T
C
is defined to be the
temperature at the package pins where
contact is made to the circuit board).
Electrical Specifications,
T
C
= 25°C, Z
O
= 50
Ω,
V
d
= 3 V, and using default of no external resistor at
the R
bias
pin
Symbol
G
test
NF
test
NF
MIN
Parameters and Test Conditions
Gain in Test Circuit
[1]
Noise Figure in Test Circuit
[1]
Minimum Noise Figure
(measured with
Γ
opt
presented to the
input and 50
Ω
presented to the output)
f = 2.0 GHz
f = 2.0 GHz
f = 0.9 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
f = 0.9 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
Units Min. Typ. Max. Std. Dev.
[3]
dB
dB
dB
16
19
1.85
1.6
1.6
1.6
1.6
1.6
1.6
1.6
17.0
17.5
18.0
18.5
17.5
16.0
14.5
13
13
11.5
11.5
13
12.5
12
0.8
0.9
0.9
1.0
1.4
1.3
1.2
2.3
1.0
0.1
0.1
G
A
Associated Gain at NF
MIN
(measured with
Γ
opt
presented to the
input and 50
Ω
presented to the output)
dB
1.0
IP
3
Third Order Intercept Point
(measured with 50
Ω
presented
to the input and output)
f = 0.9 GHz dBm
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
f = 0.9 GHz dBm
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
1.2
P
1 dB
Output Power at 1 dB Gain Compression
(measured with 50
Ω
presented
to the input and output)
1.1
3
MGA-85563 Electrical Specifications,
continued, T
C
= 25°C, Z
O
= 50
Ω,
V
d
= 3 V, and using default
of no external resistor at the R
bias
pin
Symbol
VSWR
in
VSWR
out
ISOL
I
d
Parameters and Test Conditions
Input VSWR
[2]
Output VSWR
[2]
Isolation
Device Current
f = 0.9 – 3.0 GHz
f = 3.0 – 6.0 GHz
dB
mA
Units Min. Typ. Max. Std. Dev.
[3]
2.5:1
1.3:1
37
30
15
20
0.6
1.9
Notes:
1. Guaranteed specifications are 100% tested in the circuit of Figure 1.
2. Measured using the final test circuit shown below at f = 2 GHz.
3. Standard Deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
MGA-85563 Final Test Circuit,
T
C
= 25°C, Z
O
= 50
Ω
56 pF
RF
INPUT
4.7 nH
56 pF
940 pF
3V
RF
OUTPUT
18 nH
85
4
MGA-85563 Typical Performance,
T
C
= 25°C, Z
O
= 50
Ω,
V
d
= 3 V, and using default of no external
resistor at the R
bias
pin
4
3.3V
3.0V
2.7V
NOISE FIGURE (dB)
20
4
+85°C
+25°C
–40°C
NOISE FIGURE (dB)
ASSOCIATED GAIN (dB)
3
18
3
16
2
2
14
1
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
12 3.3 V
3.0 V
2.7 V
10
0
1
1
0
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Minimum Noise Figure vs.
Frequency and Voltage.
Figure 2. Associated Gain vs.
Frequency and Voltage.
Figure 3. Minimum Noise Figure vs.
Frequency and Temperature.
20
NOISE FIGURE AND GAIN (dB)
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
G
A
50
NF
50
NF
MIN
OUTPUT POWER (dBm)
6
ASSOCIATED GAIN (dB)
18
4
16
2
14
0
12 +85°C
+25°C
–40°C
10
0
1
2
3
4
5
6
-2 3.3V
3.0V
2.7V
-4
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Associated Gain vs.
Frequency and Temperature.
Figure 5. Gain and Noise Figure (50
Ω
Source and Load) vs. Frequency.
Figure 6. Output Power @ 1 dB Gain
Compression vs. Frequency and Voltage.
6
+85°C
+25°C
–40°C
17
3.3V
3.0V
15 2.7V
13
17
15
13
IP
3
(dBm)
OUTPUT POWER (dBm)
4
+85°C
+25°C
–40°C
2
IP
3
(dBm)
11
9
11
9
7
5
0
-2
7
-4
0
1
2
3
4
5
6
FREQUENCY (GHz)
5
0
1
2
3
4
5
6
FREQUENCY (GHz)
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 7. Output Power @ 1 dB Gain
Compression vs. Frequency and
Temperature.
Figure 8. Output Third Order Intercept
Point vs. Frequency and Voltage.
Figure 9. Output Third Order Intercept
Point vs. Frequency and Temperature.
5
MGA-85563 Typical Performance,
continued,
T
C
= 25°C, Z
O
= 50
Ω,
V
d
= 3 V, and using default of
no external resistor at the R
bias
pin
20
DEVICE CURRENT, I
d
(mA)
20
6
4
16
+85°C
+25°C
–40°C
16
P
1dB
and IP
3
(dBm)
INPUT, IP
3
(dBm)
2
0
-2
-4
-6
31 mA
23 mA
19 mA
15 mA
12
12
IP
3
8
8
4
4
P
1dB
-8
-10
32
0
0
1
2
3
4
5
6
SUPPLY VOLTAGE (V)
0
14 16 18
20 22 24 26 28 30
0
1
2
3
4
5
6
CURRENT (mA) @ 2.0 GHz
FREQUENCY (GHz)
Figure 10. Device Current vs. Voltage
and Temperature.
Figure 11. Output Third Order
Intercept and P
1dB
vs. Device Current.
Figure 12. Input Third Order Intercept
vs. Frequency and Device Current.
10
25
8
Input
VSWR
23
6
GAIN (dB)
21
G
ass
4
19
Gain, |S
21
|
2
2
Output
17
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
15
14 16 18
20 22 24 26 28 30
32
CURRENT (mA) @ 2.0 GHz
Figure 13. Input and Output VSWR vs.
Frequency.
Figure 14. Gain, |S
21
|
2
, and Gain
Associated with Minimum Noise vs.
Current.
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