N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 10Ω
ZVN3310A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
100
200
2
±
20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
100
40
15
5
5
7
6
7
500
10
100
0.8
2.4
20
1
50
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
mA
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=500mA
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V,I
D
=500mA
V
DS
=25V,I
D
=500mA
Forward Transconductance(1)(2 g
fs
)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
3-378
ZVN3310A
ZVN3310A
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
TYPICAL CHARACTERISTICS
1.4
1.6
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 10Ω
1.2
1.4
1.0
V
GS=
10V
9V
8V
V
GS=
10V
9V
8V
7V
6V
5V
4V
1.2
0.8
1.0
D
G
7V
S
0.6
6V
0.8
0.6
0.4
5V
E-Line
TO92 Compatible
0.4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
DS
SYMBOL
VALUE
100
200
2
±
20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
0.2
3V
0
2
4
6
8
10
4V
0.2
0
3V
0
I
D(On)
-On-State Drain Current (Amps)
V
DS
- Drain Source
Voltage (Volts)
I
D(On)
-On-State Drain Current (Amps)
0
10
20
30
40
50
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
10
V
DS=
25V
1.4
1.2
8
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
Static Drain-Source On-State
Resistance (1)
R
DS(on)
100
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
40
15
5
5
7
6
7
500
10
100
0.8
2.4
20
1
50
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
mA
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=500mA
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V,I
D
=500mA
V
DS
=25V,I
D
=500mA
1.0
6
0.8
0.6
4
I
D=
1A
0.4
2
0.5A
0.2
0.2A
2
4
6
8
10
0
V
DS-
Drain Source
Voltage (Volts)
I
D(On)-
On-State Drain Current (Amps)
0
0
4
8
12
16
20
0
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Voltage Saturation Characteristics
Transfer Characteristics
100
I
D=-
0.5A
)
on
S(
R
D
2.4
2.2
Forward Transconductance(1)(2 g
fs
)
2.0
1.8
1.6
e
eR
ce
an
ist
s
10
1.4
1.2
rc
ou
-S
ain
Dr
Gate Thresh
old
I
D=
1A
0.5A
0.2A
1.0
0.8
1
Normalised R
DS(on)
and V
GS(th)
0.6
Voltage V
GS
(th)
R
DS(ON)
-Drain Source Resistance
(Ω)
1
2
3
4
5 6 7 8 9 10
20
0.4
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
V
GS
-Gate Source Voltage
(Volts)
T-Temperature (C°)
On-resistance vs gate-source voltage
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3-379
3-378
ZVN3310A
TYPICAL CHARACTERISTICS
160
160
V
DS=
25V
V
DS=
25V
120
120
80
80
g
fs
-Transconductance (mS)
0
0
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
1.2
g
fs
-Transconductance (mS)
40
40
I
D
- Drain Current (Amps)
V
GS
-Gate Source Voltage (Volts)
Transconductance v drain current
V
DS
=
20V 50V
80V
I
D=
0.6A
Transconductance v gate-source voltage
50
16
14
40
12
30
10
C
iss
8
20
6
C-Capacitance (pF)
10
4
0
10
20
30
40
50
V
GS
-Gate Source Voltage (Volts)
0
C
oss
C
rss
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
DS
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-380
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