3.5V 3.3W RF Power Amplifier IC for GSM
ITT2110AH / ITT2111AH / ITT2112AH
General Description
The ITT211X family of GaAs MESFET power amplifiers
is designed for Class IV GSM cellular phones. With
3.3W output power, these parts are suitable for dual
band GSM/PCN designs.
The ITT2110AH and
ITT2111AH include a built-in negative voltage
generator, while the ITT2112AH is a stand-alone dual
bias PA. Also, the ITT2110AH has a detected power
“sense” output that eliminates the need for a coupler and
detector in the AGC circuit.
PRELIMINARY
DATA SHEET
V
OSC
N/C
N/C
N/C
GND
RF
IN
GND
V
D1
V
D2
V
D3
GND
GND
GND
V
D4
V
NVG
C
OSC1a
C
OSC1b
C
OSC2a
C
OSC2b
V
OUT
GND
V
G
V
SENSE
GND
RF
OUT
RF
OUT
RF
OUT
GND
Features
•
•
•
•
•
Single Bias (ITT2110AH, ITT2111AH)
Detected Output Power Sense (ITT2110AH)
Class AB Operation
Self-Aligned MSAG
®
-Lite MESFET Process
Guaranteed Stability and Ruggedness
Typical 3.5 Volt Performance
35.2 dBm Power Output
35.2 dB Power Gain
41% Power Added Efficiency
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
Rating
DC Supply Voltage
(Pins 8, 9, 10, 14)
DC Gate Bias Voltage
(Pin 21)
DC Supply Voltage (
NVG – ITT2110AH, ITT2111AH: Pins 1, 28)
RF Input Power
Junction Temperature
Storage Temperature Range
28 pin narrow body SSOP
ITT2110AH
Symbol
V
DD
V
G
V
OSC
,V
NVG
P
IN
T
J
T
STG
Value
10
-5
10
10
150
-40 to +150
Unit
Vdc
Vdc
Vdc
mW
°C
°C
ELECTRICAL CHARACTERISTICS
V
DD
=3.5 V, P
IN
=0 dBm, T
A
=25 °C, Input and output externally matched to 50
Ω.
Characteristic
Frequency Range
Output Power (
V
CTL
adjusted for desired output power)
Power Gain (
P
OUT
= 35.2 dBm)
Power Added Efficiency (
P
OUT
= 35.2 dBm)
Harmonics (
P
OUT
= 35.2 dBm)
Input VSWR (
P
OUT
= 35.2 dBm), 50
Ω
Ref.
Thermal Resistance
(Junction of 4
th
stage FET to solder point of pin 11)
Load Mismatch
(V
DD
= 5.1V, VSWR = 10:1, P
IN
= +6 dBm)
Stability
(P
IN
= -3 to +10 dBm, V
DD
= 2 to 5.1 V, P
OUT
< 35.2 dBm, Load VSWR = 10:1)
Preliminary Data - Specifications Subject to Change Without Notice
Symbol
ƒ
P
OUT
G
P
η
2ƒ
o,
3ƒ
o
—
R
TH J-S
—
—
Typical
880 to 915
35.2
35.2
41
<−40
<2:1
17
Unit
MHz
dBm
dB
%
dBc
—
°C/W
No Degradation in Power Output
All non-harmonically related outputs
more than 70 dB below desired signal
901968 C, December 1998
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
Tel: 1-540-563-3949
1-888-563-3949 (USA)
Fax: 1-540-563-8616
1
3.5V 3.3W RF Power Amplifier IC for GSM
ITT2110AH / ITT2111AH / ITT2112AH
APPLICATION INFORMATION
V
REG
kΩ
Ω
4700 pF
47 kΩ
Ω
PRELIMINARY
DATA SHEET
Note: Electrical data were taken with an evaluation board using the schematic shown in Figure 1, pulsed according to the ETSI GSM specification.
20 kΩ
Ω
V
CTL
kΩ
Ω
4700 pF
-
ADI 8531
V
NVG
1
28
27
26
25
2.2 pF
5
6
nH
Ω
7
8
9
39 nH
10
11
4700 pF
µ
F
µ
F
12
13
22 nH
14
24
23
22
21
20
19
18
17
16
15
13 pF
100 pF
0.1
µ
F
0.1
µ
F
+
V
OSC
10
µ
F
RF
IN
V
SENSE
V
DD
RF
OUT
Figure 1. Evaluation Board Schematic (ITT2110AH)
The ITT2111AH and ITT2112AH do not have the Vsense output. The ITTT2112AH does not have the internal oscillator and NVG. All
other portions of the schematic are identical for each of the three parts.
Biasing: The negative voltage generator must be on (V
NVG
and V
OSC
fully biased) and the control voltage must be low (V
CTL
<= 0.2 V)
prior to the application of RF input power and drain bias voltage. Reverse the sequence when turning the part off — remove
the RF input and disable drain bias before disabling the negative voltage generator.
V
REG
should be from a regulated source so that it will not increase to the battery charging voltage and exceed the rail to rail
specification of the op amp.
V
DD
, V
NVG
, and V
OSC
may be tied to unregulated sources.
V
OSC
may be turned off during the transmit pulse to eliminate all spurious noise from the negative voltage
generator. Alternatively, filtering may be used to limit NVG emissions.
Preliminary Data - Specifications Subject to Change Without Notice
901968 C, December 1998
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
Tel: 1-540-563-3949
1-888-563-3949 (USA)
Fax: 1-540-563-8616
2
3.5V 3.3W RF Power Amplifier IC for GSM
ITT2110AH / ITT2111AH / ITT2112AH
TYPICAL CHARACTERISTICS (ITT2110AH)
50
40
30
20
10
0
-10
-20
-30
-40
-50
0.0
V
DD
= 3.5 V
P
IN
= 0 dBm
ƒ
= 902.5
PRELIMINARY
DATA SHEET
PAE
P
OUT
V
SENSE
300
270
240
210
180
150
120
90
60
30
0
2.5
50
Pout (dBm), PAE (%)
PAE
6:1
5:1
P
OUT
P
OUT
(dBm), PAE (%)
40
30
20
10
VSWR
V
DD
= 3.5 V
P
IN
= 0 dBm
Vsense (mV)
3:1
2:1
1:1
0
850
870
890
910
930
Frequency (MHz)
0.5
1.0
1.5
Vctl (Volts)
2.0
950
Figure 2. Power, Efficiency and Vsense vs. Control Voltage
50
45
40
35
30
25
20
15
10
5
0
-7.0
400
360
320
280
240
200
160
120
80
40
0
5.0
Figure 3. Power, Efficiency and VSWR vs. Frequency
50
45
40
35
30
25
20
15
10
5
0
2.5
PAE
Pout (dBm), PAE (%)
Pout (dBm), PAE (%)
PAE
P
OUT
P
OUT
V
SENSE
V
DD
= 3.5 V
ƒ
= 902.5
Vsense (mV)
P
IN
= 0 dBm
ƒ
= 902.5 MHz
-5.0
-3.0 -1.0 1.0
Pin (dBm)
3.0
3
3.5
4
4.5
Vdd (volts)
5
5.5
Figure 4. Power, Efficiency and Vsense vs. Input Power
0
Figure 5. Power, Efficiency and Vsense vs. Drain Voltage
Output power (dBc)
-10
-20
-30
-40
-50
-60
-70
V
DD
= 3.5 V
P
IN
= 0 dBm
P
OUT
= 35.2 dBm
ƒ
= 902.5 MHz
ƒο
2ƒο
3ƒο
4ƒο
Harmonics
5ƒο
6ƒο
Figure 6. Harmonics
Preliminary Data - Specifications Subject to Change Without Notice
901968 C, December 1998
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
Tel: 1-540-563-3949
1-888-563-3949 (USA)
Fax: 1-540-563-8616
3
VSWR
4:1
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