IXSH 45N120B I
= 75 A
C25
IXST 45N120B V
= 1200 V
CES
"S" Series - Improved SCSOA Capability
V
CE(sat)
= 3.0 V
High Voltage IGBT
Preliminary data
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
P
C
T
J
T
JM
T
stg
M
d
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C (limited by leads)
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 5
W
Clamped inductive load
T
J
= 125°C, V
GE
= 720 V; V
GE
= 15 V, R
G
= 5
W
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
75
45
180
I
CM
= 90
@ 0.8 V
CES
10
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
ms
W
°C
°C
°C
TO-247 AD (IXSH)
(TAB)
G
C
E
TO-268 ( IXST)
G
E
(TAB)
C = Collector
TAB = Collector
G = Gate
S = Emitter
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
300
°C
g
Features
• Epitaxial Silicon drift region
- fast switching
- small tail current
• MOS gate turn-on for drive simplicity
Applications
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
6
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1200
3
T
J
= 125°C
6
50
2.5
±100
T
J
= 125°C
2.5
2.6
3.0
V
V
mA
mA
nA
V
V
•
•
•
•
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1.0 mA, V
GE
= 0 V
= 250
mA,
V
CE
= V
GE
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
• Welding
V
CE
= 0.8 • V
CES
Note 1
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90,
V
GE
= 15 V
Note 2
IXYS reserves the right to change limits, test conditions, and dimensions.
98713A (7/00)
© 2000 IXYS All rights reserved
1-2
IXSH 45N120B
IXST 45N120B
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
16
23
3300
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
240
65
120
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
40
45
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V
R
G
= 5
W
V
CE
= 0.8 V
CES
Note 3
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V
R
G
= 5
W,
V
CE
= 0.8 V
CES
Note 3
36
27
360
380
13
38
29
2.9
440
700
22
500
750
22
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.42 K/W
(TO-247)
0.25
K/W
TO-268AA (D
3
PAK)
Dim. Millimeter
Min. Max.
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4
6.2
1.65 2.13
-
4.5
1.0
1.4
10.8 11.0
4.7
0.4
5.3
0.8
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
TO-247 AD (IXSH) Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
Notes: 1.
2.
3.
I
C
= I
C90
; V
CE
= 10 V,
Note 2
1.5 2.49
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t
£
300
ms,
duty cycle
£
2 %
Switching times may increase for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
.
Dim.
Min. Recommended Footprint
A
A
1
A
2
b
b
2
C
D
E
E
1
e
H
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
Power technology
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