QPA1011
7.9 – 11.0 GHz 25 W GaN Power Amplifier
Product Description
Qorvo’s QPA1011 is a X-band high power MMIC amplifier
fabricated on Qorvo’s production 0.15um GaN on SiC
process (QGaN15). The QPA1011 operates from 7.9 – 11
GHz and typically provides 25 W saturated output power
with power-added efficiency of 37.5% and large-signal gain
of 19.5 dB. This combination of wideband performance
provides the flexibility designers are looking for to improve
system performance while reducing size and cost.
QPA1011 can also support a variety of operating conditions
to best support system requirements. With good thermal
properties, it can support a range of bias voltages and will
perform well under both CW and pulse operations.
The QPA1011 is matched to 50Ω with integrated DC
blocking capacitors on both RF I/O ports simplifying system
integration. The wideband performance and operational
flexibility allow it support satellite communication and data
links, as well as, military and commercial radar systems.
24-Lead 4.5 x 5.0 x 1.72 mm Air Cavity Laminate Package
Product Features
Frequency Range: 7.9 – 11 GHz
P
OUT
: 44.5 dBm at P
IN
= 25 dBm
PAE: 37.5 % at P
IN
= 25 dBm
Large Signal Gain: 19.5 dB at P
IN
= 25 dBm
Small Signal Gain: 26 dB
Integrated Power Detector
Bias: V
D
= 24 V, I
DQ
= 1200 mA, V
G
= −1.9 V Typical
Pulsed V
D
: PW =100 µS, DC = 10%
Package Dimensions: 4.5 x 5.0 x 1.72 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Lead-free and RoHS compliant.
Functional Block Diagram
Applications
Satellite Communications
Data Links
Military and Commercial Radar
Ordering Information
Part No.
QPA1011
QPA1011SR
QPA1011TR7
QPA1011S2
QPA1011PCB4B01
Description
7.9 – 11 GHz 25 W GaN PA
100 Piece 7” Reel
250 Piece 7” Reel
Samples (2 pcs. pack)
Evaluation Board
Data Sheet Rev. D, November 20, 2019 | Subject to change without notice
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QPA1011
7.9 – 11.0 GHz 25 W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Drain Voltage (V
D
)
Gate Voltage Range (V
G
)
Drain Current (I
D1
/I
D2
)
Gate Current (I
G
)
Power Dissipation (P
DISS
), 85°C, CW
Input Power (P
IN
), CW, 50Ω,
V
D
=28 V, I
DQ
=1200 mA, 85 °C
Input Power (P
IN
), CW, VSWR 3:1,
V
D
=28 V, I
DQ
=1200 mA 85 °C
Mounting Temperature (30 seconds)
Storage Temperature
Recommended Operating Conditions
Parameter
Drain Voltage (V
D
)
Drain Current (I
DQ
)
Gate Voltage Range (V
G
)
Temperature (T
BASE
)
Value / Range
29.5 V
−8 to 0V
672 mA / 2880 mA
See chart, pg. 21
70 W
30 dBm
30 dBm
260 °C
−55 to 150 °C
Value / Range
24 V
1200 mA
-2.9 to -1.5 V
-40 to +85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Electrical Specifications
Parameter
Operational Frequency Range
Output Power (P
IN
= 25 dBm)
7.9 GHz
9.0 GHz
11.0 GHz
7.9 GHz
9.0 GHz
11.0 GHz
7.9 GHz
10.0 GHz
11.0 GHz
7.9 GHz
9.0 GHz
11.0 GHz
7.9 GHz
9.0 GHz
11.0 GHz
7.9 GHz
9.0 GHz
11.0 GHz
Min
7.9
Typ
44.2
45.0
44.8
35.6
38.7
39.4
−20.0
−21.2
−21.5
29.0
28.8
28.0
13.5
30.0
17.5
9.0
10.0
16.0
−0.006
−0.053
Max
11
Units
GHz
dBm
dBm
dBm
%
%
%
dBc
dBc
dBc
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB/°C
dB/°C
Power Added Efficiency (P
IN
= 25 dBm)
3
rd
Order Intermodulation Level
(P
OUT
/Tone= 38 dBm)
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power Temperature Coefficient (25 – 85 °C)
(P
IN
= 25 dBm)
Small Signal Gain Temperature Coefficient (25 – 85 °C)
Gate Leakage (V
D
= 10 V, V
G
= -4 V)
Recommended Voltage Operations
-13.2
0.1
24
28
mA
V
Test conditions, unless otherwise noted: 25 °C, Pulsed V
D
: PW = 100 µS, DC = 10%, V
D
= 24 V, I
DQ
= 1200 mA, V
G
= −1.9 V Typical
Data Sheet Rev. D, November 20, 2019 | Subject to change without notice
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QPA1011
7.9 – 11.0 GHz 25 W GaN Power Amplifier
Performance Plots – Large Signal (Pulsed)
47
46
45
44
43
42
Pulsed V
D
: PW = 100 µS, DC = 10%
- 40 C
+25 C
+85 C
Output Power vs. Frequency vs. Temp.
V
D
= 24 V, I
DQ
= 1200 mA, P
IN
= 25 dBm
50
45
40
35
30
25
Power Added Eff. vs. Frequency vs. Temp.
V
D
= 24 V, I
DQ
= 1200 mA, P
IN
= 25 dBm
Power Added Eff. (%)
Output Power (dBm)
- 40 C
+25 C
+85 C
Pulsed V
D
: PW = 100 µS, DC = 10%
20
7.5
8.0
8.5
9.0
9.5
10.0 10.5 11.0 11.5 12.0 12.5
41
7.5
8.0
8.5
9.0
9.5
10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Frequency (GHz)
4000
3500
3000
2500
2000
1500
1000
Drain Current vs. Frequency vs. Temp.
Gate Current (mA)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
7.5
Gate Current vs. Frequency vs. Temp.
V
D
= 24 V, I
DQ
= 1200 mA, P
IN
= 25 dBm
Pulsed V
D
: PW = 100 µS, DC = 10%
- 40 C
+25 C
+85 C
Drain Current (mA)
- 40 C
+25 C
+85 C
V
D
= 24 V, I
DQ
= 1200 mA, P
IN
= 25 dBm
Pulsed V
D
: PW = 100 µS, DC = 10%
7.5
8.0
8.5
9.0
9.5 10.0 10.5 11.0 11.5 12.0 12.5
8.0
8.5
9.0
9.5
10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Frequency (GHz)
47
46
Output Power vs. Frequency vs. V
D
P
IN
= 25 dBm, I
DQ
= 1200 mA, Temp. = 25 °C
60
55
Power Added Eff. vs. Frequency vs. V
D
P
IN
= 25 dBm, I
DQ
= 1200 mA, Temp. = 25 °C
Pulsed V
D
: PW = 100 µS, DC = 10%
Power Added Eff. (%)
Output Power (dBm)
45
50
45
40
35
30
44
43
42
18 V
41
Pulsed V
D
: PW = 100 µS, DC = 10%
40
7.5
8.0
8.5
9.0
9.5
10.0 10.5 11.0 11.5 12.0 12.5
20 V
22 V
24 V
26 V
28 V
25
20
7.5
8.0
18 V
8.5
20 V
9.0
9.5
22 V
24 V
26 V
28 V
10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. D, November 20, 2019 | Subject to change without notice
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QPA1011
7.9 – 11.0 GHz 25 W GaN Power Amplifier
Performance Plots – Large Signal (Pulsed)
4000
3500
Drain Current. vs. Frequency vs. V
D
Gate Current (mA)
1.6
1.4
1.2
1.0
Gate Current. vs. Frequency vs. V
D
P
IN
= 25 dBm, I
DQ
= 1200 mA, Temp. = 25 °C
Drain Current (mA)
3000
Pulsed V
D
: PW = 100 µS, DC = 10%
2500
2000
1500
1000
500
7.5
8.0
8.5
9.0
9.5 10.0 10.5 11.0 11.5 12.0 12.5
P
IN
= 25 dBm, I
DQ
= 1200 mA, Temp. = 25 °C
Pulsed V
D
: PW = 100 µS, DC = 10%
18 V
20 V
22 V
24 V
26 V
28 V
0.8
0.6
0.4
0.2
0.0
-0.2
-0.4 7.5
8.0
18 V
8.5
20 V
9.0
22 V
24 V
26 V
28 V
9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Frequency (GHz)
47
46
45
44
43
42
Output Power vs. Frequency vs. I
DQ
P
IN
= 25 dBm, V
D
= 24 V, Temp. = 25 °C
50
45
40
35
30
25
Power Added Eff. vs. Frequency vs. I
DQ
P
IN
= 25 dBm, V
D
= 24 V, Temp. = 25 °C
600 mA
1200 mA
Power Added Eff. (%)
Output Power (dBm)
600 mA
1200 mA
Pulsed V
D
: PW = 100 µS, DC = 10%
41
7.5
8.0
8.5
9.0
9.5
10.0 10.5 11.0 11.5 12.0 12.5
20
7.5
8.0
Pulsed V
D
: PW = 100 µS, DC = 10%
8.5
9.0
9.5
10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Frequency (GHz)
4500
4000
Drain Current. vs. Frequency vs. I
DQ
P
IN
= 25 dBm, V
D
= 24 V, Temp. = 25 °C
1.0
0.8
0.6
0.4
0.2
0.0
Gate Current. vs. Frequency vs. I
DQ
P
IN
= 25 dBm, V
D
= 24 V, Temp. = 25 °C
Pulsed V
D
: PW = 100 µS, DC = 10%
Drain Current (mA)
3500
3000
2500
2000
1500
Pulsed V
D
: PW = 100 µS, DC = 10%
1000
7.5
8.0
8.5
9.0
9.5 10.0 10.5 11.0 11.5 12.0 12.5
600 mA
1200 mA
Gate Current (mA)
600 mA
-0.2
7.5
8.0
8.5
9.0
1200 mA
9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. D, November 20, 2019 | Subject to change without notice
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QPA1011
7.9 – 11.0 GHz 25 W GaN Power Amplifier
Performance Plots – Large Signal (Pulsed)
47
45
41
39
37
35
33
31
29
27
25
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
V
D
= 24 V, I
DQ
= 1200 mA, Freq. = 9 GHz
Pulsed V
D
: PW = 100 µS, DC = 10%
-40C
+25C
+85C
43
Output Power vs. Input Power vs. Temp.
Power Added Eff. (%)
50
PAE vs. Input Power vs. Temp.
V
D
= 24 V, I
DQ
= 1200 mA, Freq. = 9 GHz
45
40
35
30
25
20
15
10
5
0
0
2
4
Output Power (dBm)
-40C
+25C
+85C
Pulsed V
D
: PW = 100 µS, DC = 10%
6
8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Input Power (dBm)
4000
3500
Drain Current vs. Input Power vs. Temp.
V
D
= 24 V, I
DQ
= 1200 mA, Freq. = 9 GHz
5.0
4.5
4.0
Gate Current vs. Input Power vs. Temp.
V
D
= 24 V, I
DQ
= 1200 mA, Freq. = 9 GHz
Pulsed V
D
: PW = 100 µS, DC = 10%
Drain Current (mA)
Gate Current (mA)
3000
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
-40C
+25C
+85C
2500
2000
1500
1000
500
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
-40C
+25C
+85C
Pulsed V
D
: PW = 100 µS, DC = 10%
Input Power (dBm)
Input Power (dBm)
47
Output Power vs. Input Power vs. Freq.
Power Added Eff. (%)
50
PAE vs. Input Power vs. Freq.
V
D
= 24 V, I
DQ
= 1200 mA, Temp. = 25 °C
45
45
40
35
30
25
20
15
10
5
0
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
0
2
4
7.9 GHz
8.0 GHz
9.0 GHz
10.0 GHz
11.0 GHz
V
D
= 24 V, I
DQ
= 1200 mA, Temp. = 25 °C
Pulsed V
D
: PW = 100 µS, DC = 10%
Output Power (dBm)
43
41
39
37
35
33
31
29
27
7.9 GHz
8.0 GHz
9.0 GHz
10.0 GHz
11.0 GHz
Pulsed V
D
: PW = 100 µS, DC = 10%
6
8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. D, November 20, 2019 | Subject to change without notice
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