Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | IDT (Integrated Device Technology) |
Parts packaging code | BGA |
package instruction | LBGA, BGA256,16X16,40 |
Contacts | 256 |
Reach Compliance Code | not_compliant |
ECCN code | 3A991.B.2.A |
Maximum access time | 15 ns |
I/O type | COMMON |
JESD-30 code | S-PBGA-B256 |
JESD-609 code | e0 |
length | 17 mm |
memory density | 4718592 bit |
Memory IC Type | DUAL-PORT SRAM |
memory width | 36 |
Humidity sensitivity level | 3 |
Number of functions | 1 |
Number of ports | 2 |
Number of terminals | 256 |
word count | 131072 words |
character code | 128000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 128KX36 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | LBGA |
Encapsulate equivalent code | BGA256,16X16,40 |
Package shape | SQUARE |
Package form | GRID ARRAY, LOW PROFILE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 225 |
power supply | 2.5/3.3,3.3 V |
Certification status | Not Qualified |
Maximum seat height | 1.5 mm |
Maximum standby current | 0.015 A |
Minimum standby current | 3.15 V |
Maximum slew rate | 0.44 mA |
Maximum supply voltage (Vsup) | 3.45 V |
Minimum supply voltage (Vsup) | 3.15 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn63Pb37) |
Terminal form | BALL |
Terminal pitch | 1 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 20 |
width | 17 mm |
Base Number Matches | 1 |
IDT70V659S15BC | IDT70V659S12DRI | IDT70V659S15BCI | IDT70V659S15BFI | |
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Description | Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 | Dual-Port SRAM, 128KX36, 12ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208 | Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 | Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208 |
Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
Maker | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
Parts packaging code | BGA | QFP | BGA | BGA |
package instruction | LBGA, BGA256,16X16,40 | 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208 | LBGA, BGA256,16X16,40 | TFBGA, BGA208,17X17,32 |
Contacts | 256 | 208 | 256 | 208 |
Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant |
ECCN code | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
Maximum access time | 15 ns | 12 ns | 15 ns | 15 ns |
I/O type | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | S-PBGA-B256 | S-PQFP-G208 | S-PBGA-B256 | S-PBGA-B208 |
JESD-609 code | e0 | e0 | e0 | e0 |
length | 17 mm | 28 mm | 17 mm | 15 mm |
memory density | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bit |
Memory IC Type | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM |
memory width | 36 | 36 | 36 | 36 |
Humidity sensitivity level | 3 | 3 | 3 | 3 |
Number of functions | 1 | 1 | 1 | 1 |
Number of ports | 2 | 2 | 2 | 2 |
Number of terminals | 256 | 208 | 256 | 208 |
word count | 131072 words | 131072 words | 131072 words | 131072 words |
character code | 128000 | 128000 | 128000 | 128000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 85 °C | 85 °C | 85 °C |
Minimum operating temperature | - | -40 °C | -40 °C | -40 °C |
organize | 128KX36 | 128KX36 | 128KX36 | 128KX36 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | LBGA | FQFP | LBGA | TFBGA |
Encapsulate equivalent code | BGA256,16X16,40 | QFP208,1.2SQ,20 | BGA256,16X16,40 | BGA208,17X17,32 |
Package shape | SQUARE | SQUARE | SQUARE | SQUARE |
Package form | GRID ARRAY, LOW PROFILE | FLATPACK, FINE PITCH | GRID ARRAY, LOW PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH |
Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
Peak Reflow Temperature (Celsius) | 225 | 225 | 225 | 225 |
power supply | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum seat height | 1.5 mm | 4.1 mm | 1.5 mm | 1.2 mm |
Maximum standby current | 0.015 A | 0.015 A | 0.015 A | 0.015 A |
Minimum standby current | 3.15 V | 3.15 V | 3.15 V | 3.15 V |
Maximum slew rate | 0.44 mA | 0.515 mA | 0.49 mA | 0.49 mA |
Maximum supply voltage (Vsup) | 3.45 V | 3.45 V | 3.45 V | 3.45 V |
Minimum supply voltage (Vsup) | 3.15 V | 3.15 V | 3.15 V | 3.15 V |
Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
surface mount | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) |
Terminal form | BALL | GULL WING | BALL | BALL |
Terminal pitch | 1 mm | 0.5 mm | 1 mm | 0.8 mm |
Terminal location | BOTTOM | QUAD | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | 20 | 20 | 20 | 20 |
width | 17 mm | 28 mm | 17 mm | 15 mm |
Base Number Matches | 1 | 1 | 1 | 1 |