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IDT70V659S15BC

Description
Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
Categorystorage    storage   
File Size191KB,23 Pages
ManufacturerIDT (Integrated Device Technology)
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IDT70V659S15BC Overview

Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256

IDT70V659S15BC Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeBGA
package instructionLBGA, BGA256,16X16,40
Contacts256
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.A
Maximum access time15 ns
I/O typeCOMMON
JESD-30 codeS-PBGA-B256
JESD-609 codee0
length17 mm
memory density4718592 bit
Memory IC TypeDUAL-PORT SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of ports2
Number of terminals256
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA256,16X16,40
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height1.5 mm
Maximum standby current0.015 A
Minimum standby current3.15 V
Maximum slew rate0.44 mA
Maximum supply voltage (Vsup)3.45 V
Minimum supply voltage (Vsup)3.15 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn63Pb37)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width17 mm
Base Number Matches1

IDT70V659S15BC Related Products

IDT70V659S15BC IDT70V659S12DRI IDT70V659S15BCI IDT70V659S15BFI
Description Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 Dual-Port SRAM, 128KX36, 12ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208 Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Parts packaging code BGA QFP BGA BGA
package instruction LBGA, BGA256,16X16,40 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208 LBGA, BGA256,16X16,40 TFBGA, BGA208,17X17,32
Contacts 256 208 256 208
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 15 ns 12 ns 15 ns 15 ns
I/O type COMMON COMMON COMMON COMMON
JESD-30 code S-PBGA-B256 S-PQFP-G208 S-PBGA-B256 S-PBGA-B208
JESD-609 code e0 e0 e0 e0
length 17 mm 28 mm 17 mm 15 mm
memory density 4718592 bit 4718592 bit 4718592 bit 4718592 bit
Memory IC Type DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
memory width 36 36 36 36
Humidity sensitivity level 3 3 3 3
Number of functions 1 1 1 1
Number of ports 2 2 2 2
Number of terminals 256 208 256 208
word count 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 85 °C 85 °C 85 °C
Minimum operating temperature - -40 °C -40 °C -40 °C
organize 128KX36 128KX36 128KX36 128KX36
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LBGA FQFP LBGA TFBGA
Encapsulate equivalent code BGA256,16X16,40 QFP208,1.2SQ,20 BGA256,16X16,40 BGA208,17X17,32
Package shape SQUARE SQUARE SQUARE SQUARE
Package form GRID ARRAY, LOW PROFILE FLATPACK, FINE PITCH GRID ARRAY, LOW PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 225 225 225 225
power supply 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.5 mm 4.1 mm 1.5 mm 1.2 mm
Maximum standby current 0.015 A 0.015 A 0.015 A 0.015 A
Minimum standby current 3.15 V 3.15 V 3.15 V 3.15 V
Maximum slew rate 0.44 mA 0.515 mA 0.49 mA 0.49 mA
Maximum supply voltage (Vsup) 3.45 V 3.45 V 3.45 V 3.45 V
Minimum supply voltage (Vsup) 3.15 V 3.15 V 3.15 V 3.15 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn63Pb37) Tin/Lead (Sn/Pb) Tin/Lead (Sn63Pb37) Tin/Lead (Sn63Pb37)
Terminal form BALL GULL WING BALL BALL
Terminal pitch 1 mm 0.5 mm 1 mm 0.8 mm
Terminal location BOTTOM QUAD BOTTOM BOTTOM
Maximum time at peak reflow temperature 20 20 20 20
width 17 mm 28 mm 17 mm 15 mm
Base Number Matches 1 1 1 1
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