IDT70V659S15BCI datasheet, PDF

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IDT70V659S15BCI: DescriptionDual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256; Categorystorage storage; File Size191KB，23 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT70V659S15BCI Overview

Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256

IDT70V659S15BCI Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	BGA
package instruction	LBGA, BGA256,16X16,40
Contacts	256
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.A
Maximum access time	15 ns
I/O type	COMMON
JESD-30 code	S-PBGA-B256
JESD-609 code	e0
length	17 mm
memory density	4718592 bit
Memory IC Type	DUAL-PORT SRAM
memory width	36
Humidity sensitivity level	3
Number of functions	1
Number of ports	2
Number of terminals	256
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Encapsulate equivalent code	BGA256,16X16,40
Package shape	SQUARE
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	2.5/3.3,3.3 V
Certification status	Not Qualified
Maximum seat height	1.5 mm
Maximum standby current	0.015 A
Minimum standby current	3.15 V
Maximum slew rate	0.49 mA
Maximum supply voltage (Vsup)	3.45 V
Minimum supply voltage (Vsup)	3.15 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn63Pb37)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	17 mm
Base Number Matches	1

IDT70V659S15BCI Related Products

	IDT70V659S15BCI	IDT70V659S12DRI	IDT70V659S15BC	IDT70V659S15BFI
Description	Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256	Dual-Port SRAM, 128KX36, 12ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208	Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256	Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Parts packaging code	BGA	QFP	BGA	BGA
package instruction	LBGA, BGA256,16X16,40	28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208	LBGA, BGA256,16X16,40	TFBGA, BGA208,17X17,32
Contacts	256	208	256	208
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	15 ns	12 ns	15 ns	15 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	S-PBGA-B256	S-PQFP-G208	S-PBGA-B256	S-PBGA-B208
JESD-609 code	e0	e0	e0	e0
length	17 mm	28 mm	17 mm	15 mm
memory density	4718592 bit	4718592 bit	4718592 bit	4718592 bit
Memory IC Type	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
memory width	36	36	36	36
Humidity sensitivity level	3	3	3	3
Number of functions	1	1	1	1
Number of ports	2	2	2	2
Number of terminals	256	208	256	208
word count	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	70 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-	-40 °C
organize	128KX36	128KX36	128KX36	128KX36
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LBGA	FQFP	LBGA	TFBGA
Encapsulate equivalent code	BGA256,16X16,40	QFP208,1.2SQ,20	BGA256,16X16,40	BGA208,17X17,32
Package shape	SQUARE	SQUARE	SQUARE	SQUARE
Package form	GRID ARRAY, LOW PROFILE	FLATPACK, FINE PITCH	GRID ARRAY, LOW PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	225	225	225
power supply	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.5 mm	4.1 mm	1.5 mm	1.2 mm
Maximum standby current	0.015 A	0.015 A	0.015 A	0.015 A
Minimum standby current	3.15 V	3.15 V	3.15 V	3.15 V
Maximum slew rate	0.49 mA	0.515 mA	0.44 mA	0.49 mA
Maximum supply voltage (Vsup)	3.45 V	3.45 V	3.45 V	3.45 V
Minimum supply voltage (Vsup)	3.15 V	3.15 V	3.15 V	3.15 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)
Terminal form	BALL	GULL WING	BALL	BALL
Terminal pitch	1 mm	0.5 mm	1 mm	0.8 mm
Terminal location	BOTTOM	QUAD	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	20	20	20	20
width	17 mm	28 mm	17 mm	15 mm
Base Number Matches	1	1	1	1

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