Am29DS320G
Data Sheet
-XO\
7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG
0LFUR 'HYLFHV DQG )XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ
LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
)XMLWVX
Continuity of Specifications
7KHUH LV QR FKDQJH WR WKLV GDWDVKHHW DV D UHVXOW RI RIIHULQJ WKH GHYLFH DV D 6SDQVLRQ SURGXFW $Q\
FKDQJHV WKDW KDYH EHHQ PDGH DUH WKH UHVXOW RI QRUPDO GDWDVKHHW LPSURYHPHQW DQG DUH QRWHG LQ WKH
GRFXPHQW UHYLVLRQ VXPPDU\ ZKHUH VXSSRUWHG )XWXUH URXWLQH UHYLVLRQV ZLOO RFFXU ZKHQ DSSURSULDWH
DQG FKDQJHV ZLOO EH QRWHG LQ D UHYLVLRQ VXPPDU\
Continuity of Ordering Part Numbers
$0' DQG )XMLWVX FRQWLQXH WR VXSSRUW H[LVWLQJ SDUW QXPEHUV EHJLQQLQJ ZLWK ³$P´ DQG ³0%0´ 7R RUGHU
WKHVH SURGXFWV SOHDVH XVH RQO\ WKH 2UGHULQJ 3DUW 1XPEHUV OLVWHG LQ WKLV GRFXPHQW
For More Information
3OHDVH FRQWDFW \RXU ORFDO $0' RU )XMLWVX VDOHV RIILFH IRU DGGLWLRQDO LQIRUPDWLRQ DERXW 6SDQVLRQ
PHPRU\ VROXWLRQV
Publication Number
26492
Revision
A
Amendment
+1
Issue Date
January 27, 2003
ADVANCE INFORMATION
Am29DS320G
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank
— Zero latency between read and write operations
■
Flexible Bank
TM
architecture
— Read may occur in any of the three banks not being
written or erased.
— Four banks may be grouped by customer to achieve
desired bank divisions.
■
256-byte SecSi (Secured Silicon) Sector
—
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
—
Customer lockable:
One time programmable. Once
locked, data cannot be changed.
■
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
■
Package options
— 48-ball FBGA
— 48-pin TSOP
■
Top or bottom boot blocks
■
Manufactured on 0.17 µm process technology
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
■
High performance
— Access time as fast 70 ns
— Program time: 4 µs/word typical utilizing Accelerate
function
■
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■
Minimum 1 million erase cycles guaranteed per
sector
■
20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
■
Supports Common Flash Memory Interface (CFI)
■
Erase Suspend/Erase Resume
— Suspends erase operations to allow reading from
other sectors in the same bank
■
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■
Any combination of sectors can be erased
■
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
■
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
— Acceleration (ACC) function accelerates program
timing
■
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication#
26492
Rev:
A
Amendment:+1
Issue Date:
January 27, 2003
Refer to AMD’s Website (www.amd.com) for the latest information.
A D V A N C E
I N F O R M A T I O N
GENERAL DESCRIPTION
The Am29DS320G is a 32 megabit, 1.8 volt-only flash
memory device, organized as 2,097,152 words of 16
bits each or 4,194,304 bytes of 8 bits each. Word
mode data appears on DQ15–DQ0; byte mode data
appears on DQ7–DQ0. The device is designed to be
programmed in-system with the standard 1.8 volt V
CC
supply, and can also be programmed in standard
EPROM programmers.
The device is available with an access time of 70, 90,
or 120 ns. The devices are offered in 48-pin TSOP
and 48-ball FBGA packages. Standard control
pins—chip enable (CE#), write enable (WE#), and out-
put enable (OE#)—control normal read and write oper-
ations, and avoid bus contention issues.
The device requires only a
single 1.8 volt power sup-
ply
for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
Sector.
Factory locked parts provide several options.
The SecSi Sector may store a secure, random 16 byte
ESN (Electronic Serial Number), customer code (pro-
grammed through AMD’s ExpressFlash service), or
both.
DMS (Data Management Software)
allows systems
to remove EEPROM devices. by simplifying system
software: DMS performs all functions necessary to
modify data in file structures, instead of using sin-
gle-byte modifications. To write or update a particular
piece of data (a phone number or configuration data,
for example), the user only needs to state which piece
of data is to be updated, and where the updated data
is located in the system. This is an advantage com-
pared to systems where user-written software must
keep track of the old data location, status, logical to
physical translation of the data onto the Flash memory
device (or memory devices), and more. Using DMS,
user-written software does not need to interface with
the Flash memory directly. Instead, the user's software
accesses the Flash memory by calling one of only six
functions. AMD provides this software to simplify sys-
tem design and software integration efforts.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard.
Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device
sta-
tus bits:
RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to the read mode.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via program-
ming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode.
The system can also place the device into the
standby mode.
Power consumption is greatly re-
duced in both modes.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation
by dividing the memory
space into
four banks,
two 4 Mb banks with small and
large sectors, and two 12 Mb banks of large sectors.
Sector addresses are fixed, system software can be
used to form user-defined bank groups.
During an Erase/Program operation, any of the three
non-busy banks may be read from. Note that only two
banks can operate simultaneously. The device allows
a host system to program or erase in one bank, then
immediately and simultaneously read from the other
bank, with zero latency. This releases the system from
waiting for the completion of program or erase
operations.
The Am29DS320G can be organized as either a top or
bottom boot sector configuration.
Bank
Bank 1
Bank 2
Bank 3
Bank 4
Megabits
4 Mb
12 Mb
12 Mb
4 Mb
Sector Sizes
Eight 8 Kbyte/4 Kword,
Seven 64 Kbyte/32 Kword
Twenty-four 64 Kbyte/32 Kword
Twenty-four 64 Kbyte/32 Kword
Eight 64 Kbyte/32 Kword
Am29DS320G Features
The
SecSi
TM
(Secured Silicon) Sector
is an 256 byte
extra sector capable of being permanently locked by
AMD or customers. The
SecSi Indicator Bit
(DQ7) is
permanently set to a 1 if the part is
factory locked,
and set to a 0 if
customer lockable.
This way, cus-
tomer lockable parts can never be used to replace a
factory locked part.
Note that some previous AMD
32 Mbit Am29DS32x devices had a larger SecSi
2
Am29DS320G
January 27, 2003
A D V A N C E
I N F O R M A T I O N
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Special Package Handling Instructions .......................................... 5
Unlock Bypass Command Sequence ........................................... 25
Figure 4. Program Operation ................................................................ 25
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 7
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 8
Table 1. Device Bus Operations .............................................................8
Chip Erase Command Sequence ................................................. 25
Sector Erase Command Sequence .............................................. 26
Erase Suspend/Erase Resume Commands ................................ 26
Figure 5. Erase Operation .................................................................... 27
Table 13. Command Definitions ........................................................... 28
Write Operation Status . . . . . . . . . . . . . . . . . . . . 29
DQ7: Data# Polling ...................................................................... 29
Figure 6. Data# Polling Algorithm ......................................................... 29
Word/Byte Configuration ................................................................ 8
Requirements for Reading Array Data ...........................................8
Writing Commands/Command Sequences .................................... 9
Accelerated Program Operation .....................................................9
Autoselect Functions ...................................................................... 9
Simultaneous Read/Write Operations
with Zero Latency ...........................................................................9
Standby Mode ................................................................................ 9
Automatic Sleep Mode ...................................................................9
RESET#: Hardware Reset Pin .....................................................10
Output Disable Mode ...................................................................10
Table 2. Top Boot Sector Addresses ...................................................11
Table 3. Top Boot SecSi
TM
Sector Addresses ..................................... 12
Table 4. Bottom Boot Sector Addresses ...............................................13
Table 5. Bottom Boot SecSi
TM
Sector Addresses ................................ 14
RY/BY#: Ready/Busy# ................................................................. 30
DQ6: Toggle Bit I .......................................................................... 30
Figure 7. Toggle Bit Algorithm .............................................................. 30
DQ2: Toggle Bit II ......................................................................... 31
Reading Toggle Bits DQ6/DQ2 .................................................... 31
DQ5: Exceeded Timing Limits ...................................................... 31
DQ3: Sector Erase Timer ............................................................. 31
Table 14. Write Operation Status ......................................................... 32
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 33
Figure 8. Maximum Negative Overshoot Waveform ............................. 33
Figure 9. Maximum Positive Overshoot Waveform .............................. 33
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 10. I
CC1
Current vs. Time (Showing Active and
Automatic Sleep Currents).................................................................... 35
Figure 11. Typical I
CC1
vs. Frequency................................................... 35
Autoselect Mode .......................................................................... 15
Table 6. Autoselect Codes, (High Voltage Method) .............................15
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 12. Test Setup .......................................................................... 36
Figure 13. Input Waveforms and Measurement Levels ........................ 36
Sector/Sector Block Protection and Unprotection ........................ 16
Table 7. Top Boot Sector/Sector Block Addresses
for Protection/Unprotection ...................................................................16
Table 8. Bottom Boot Sector/Sector Block Addresses
for Protection/Unprotection ...................................................................16
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 14. Read Operation Timings...................................................... 37
Figure 15. Reset Timings...................................................................... 38
Write Protect (WP#) .....................................................................17
Temporary Sector Unprotect ........................................................ 17
Figure 1. Temporary Sector Unprotect Operation ................................. 17
Figure 2. In-System Sector Protection/
Sector Unprotection Algorithms ............................................................ 18
Word/Byte Configuration (BYTE#) ............................................... 39
Figure 16. BYTE# Timings for Read Operations .................................. 39
Figure 17. BYTE# Timings for Write Operations .................................. 39
Erase and Program Operations ................................................... 40
Figure 18. Program Operation Timings ................................................
Figure 19. Accelerated Program Timing Diagram ................................
Figure 20. Chip/Sector Erase Operation Timings .................................
Figure 21. Back-to-back Read/Write Cycle Timings .............................
Figure 22. Data# Polling Timings (During Embedded Algorithms) .......
Figure 23. Toggle Bit Timings (During Embedded Algorithms) ............
Figure 24. DQ2 vs. DQ6 .......................................................................
41
41
42
43
43
44
44
SecSi
TM
(Secured Silicon) Sector
Flash Memory Region .................................................................. 19
Factory Locked: SecSi Sector Programmed and Protected At the
Factory .........................................................................................19
Customer Lockable: SecSi Sector NOT Programmed or Protected At
the Factory ...................................................................................19
Figure 3. SecSi Sector Protect Verify.................................................... 20
Temporary Sector Unprotect ........................................................ 45
Figure 25. Temporary Sector Unprotect Timing Diagram..................... 45
Figure 26. Sector/Sector Block Protect and Unprotect Timing Diagram 46
Hardware Data Protection ............................................................ 20
Low VCC Write Inhibit .................................................................. 20
Write Pulse “Glitch” Protection .....................................................20
Logical Inhibit ...............................................................................20
Power-Up Write Inhibit .................................................................20
Alternate CE# Controlled Erase and Program Operations ........... 47
Figure 27. Alternate CE# Controlled Write (Erase/Program)
Operation Timings ................................................................................ 48
Common Flash Memory Interface (CFI) . . . . . . . 21
Table 9. CFI Query Identification String ................................................
Table 10. System Interface String.........................................................
Table 11. Device Geometry Definition ..................................................
Table 12. Primary Vendor-Specific Extended Query ............................
21
22
22
23
Erase And Programming Performance . . . . . . .
Latchup Characteristics . . . . . . . . . . . . . . . . . . . .
TSOP And SO Pin Capacitance . . . . . . . . . . . . . .
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . .
49
49
49
49
50
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 23
Reading Array Data ...................................................................... 23
Reset Command .......................................................................... 24
Autoselect Command Sequence .................................................. 24
Enter SecSi
TM
Sector/Exit SecSi Sector
Command Sequence ...................................................................24
Byte/Word Program Command Sequence ...................................24
FBD048—Fine-Pitch Ball Grid Array, 6 x 12 mm ......................... 50
TS 048—Thin Small Outline Package .......................................... 51
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 52
Revision A (May 14, 2002) ........................................................... 52
Revision A+1 (January 3, 2003) ................................................... 52
January 27, 2003
Am29DS320G
3
A D V A N C E
I N F O R M A T I O N
PRODUCT SELECTOR GUIDE
Part Number
Speed Rating
Standard Voltage Range: V
CC
= 1.8–2.2 V
70
70
70
30
Am29DS320G
90
90
90
40
120
120
120
50
Max Access Time (ns)
CE# Access (ns)
OE# Access (ns)
BLOCK DIAGRAM
V
CC
V
SS
OE# BYTE#
Mux
A20–A0
Bank 1 Address
Bank 1
Y-gate
X-Decoder
A20–A0
RY/BY#
Bank 2 Address
Bank 2
X-Decoder
DQ15–DQ0
A20–A0
RESET#
WE#
CE#
BYTE#
WP#/ACC
DQ15–DQ0
A20–A0
X-Decoder
Bank 3 Address
STATE
CONTROL
&
COMMAND
REGISTER
Status
DQ15–DQ0
Control
DQ15–DQ0
Mux
Bank 3
Y-gate
X-Decoder
A20–A0
Mux
Bank 4 Address
Bank 4
4
Am29DS320G
DQ15–DQ0
DQ15–DQ0
January 27, 2003
ST - Low Power RF
京公网安备 11010802033920号
EEWORLD
