APT752R4BN datasheet, PDF - EEWORLD Datasheet

APT752R4BN: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size178KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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APT752R4BN Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Maker	Microsemi
Parts packaging code	TO-247AD
package instruction	,
Contacts	3
Reach Compliance Code	compliant
Configuration	Single
Maximum drain current (Abs) (ID)	5.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	180 W
surface mount	NO
Base Number Matches	1

This Material Copyrighted By Its Respective Manufacturer

	APT752R4BN	APT802R4BN	APT752R8BN	APT802R8BN
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Parts packaging code	TO-247AD	TO-247AD	TO-247AD	TO-247AD
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
Configuration	Single	Single	Single	Single
Maximum drain current (Abs) (ID)	5.5 A	5.5 A	5 A	5 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	180 W	180 W	180 W	180 W
surface mount	NO	NO	NO	NO
Maker	Microsemi	-	Microsemi	Microsemi
Base Number Matches	1	1	1	-

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