Pin Diode, 250V V(BR), Silicon, DO-35
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
package instruction | O-LALF-W2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
application | ATTENUATOR; SWITCHING |
Minimum breakdown voltage | 250 V |
Shell connection | ISOLATED |
Configuration | SINGLE |
Maximum diode capacitance | 0.4 pF |
Nominal diode capacitance | 0.4 pF |
Diode component materials | SILICON |
Maximum diode forward resistance | 1.8 Ω |
Diode resistance test current | 30 mA |
Diode resistance test frequency | 40 MHz |
Diode type | PIN DIODE |
frequency band | MEDIUM FREQUENCY |
JEDEC-95 code | DO-35 |
JESD-30 code | O-LALF-W2 |
JESD-609 code | e0 |
Minority carrier nominal lifetime | 1 µs |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -55 °C |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Maximum power dissipation | 0.25 W |
Certification status | Not Qualified |
Reverse test voltage | 50 V |
surface mount | NO |
technology | POSITIVE-INTRINSIC-NEGATIVE |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | AXIAL |
Base Number Matches | 1 |