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DB4J406K

Description
Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, SMINI4-F3-B, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size356KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
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DB4J406K Overview

Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, SMINI4-F3-B, 3 PIN

DB4J406K Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDSO-F4
Contacts3
Manufacturer packaging codeSMINI4-F3-B
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Maximum diode capacitance18 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.6 V
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-F4
Number of components2
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
Maximum reverse current5 µA
Reverse test voltage40 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DB4J406K
Silicon epitaxial planar type
For high speed switching circuits
Features
Short reverse recovery time t
rr
Small reverse current I
R
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SMini4-F3-B
Package dimension clicks here.→
Click!
Packaging
DB4J406K0R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Name
Pin
1: Anode-1
2: Anode-2
3: Cathode-2
4: Cathode-1
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
surge current
*2
Junction temperature
Storage temperature
Single
Double
*1
Single
Double
*1
Single
Double
*1
Symbol
V
R
V
RRM
I
F
I
FM
I
FSM
T
j
T
stg
Rating
40
40
100
75
300
225
1
0.75
125
–55 to +125
Unit
V
V
mA
mA
mA
mA
A
A
°C
°C
Marking Symbol: 4B
Internal Connection
4
3
1
2
Note) *1: Value of each diode in double diodes used.
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F
I
R
C
t
t
rr
I
F
= 100 mA
V
R
= 40 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 10 mA,
R
L
= 100
2.2
0.9
Conditions
Min
Typ
Max
0.60
5
Unit
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
*: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ver. CED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: February 2012
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