This product complies with the RoHS Directive (EU 2002/95/EC).
DB4J406K
Silicon epitaxial planar type
For high speed switching circuits
Features
Short reverse recovery time t
rr
Small reverse current I
R
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SMini4-F3-B
Package dimension clicks here.→
Click!
Packaging
DB4J406K0R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Name
Pin
1: Anode-1
2: Anode-2
3: Cathode-2
4: Cathode-1
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
surge current
*2
Junction temperature
Storage temperature
Single
Double
*1
Single
Double
*1
Single
Double
*1
Symbol
V
R
V
RRM
I
F
I
FM
I
FSM
T
j
T
stg
Rating
40
40
100
75
300
225
1
0.75
125
–55 to +125
Unit
V
V
mA
mA
mA
mA
A
A
°C
°C
Marking Symbol: 4B
Internal Connection
4
3
1
2
Note) *1: Value of each diode in double diodes used.
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F
I
R
C
t
t
rr
I
F
= 100 mA
V
R
= 40 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 10 mA,
R
L
= 100
Ω
2.2
0.9
Conditions
Min
Typ
Max
0.60
5
Unit
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
*: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ω
Ver. CED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Ω
Pulse Generator
(PG-10N)
R
s
= 50
Ω
Publication date: February 2012
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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Consult our sales staff in advance for information on the following applications:
–
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life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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