UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Parameter Name | Attribute value |
Number of terminals | 4 |
Minimum breakdown voltage | 68 V |
Processing package description | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
Lead-free | Yes |
EU RoHS regulations | Yes |
state | DISCONTINUED |
packaging shape | Rectangle |
Package Size | Flange mounting |
surface mount | Yes |
Terminal form | FLAT |
terminal coating | NOT SPECIFIED |
Terminal location | pair |
Packaging Materials | Ceramic, Metal-SEALED COFIRED |
structure | single |
Shell connection | source |
Number of components | 1 |
transistor applications | amplifier |
Transistor component materials | silicon |
Channel type | N channel |
field effect transistor technology | Metal-OXIDE SEMICONDUCTOR |
operating mode | ENHANCEMENT |
Transistor type | RF power |
Maximum leakage current | 17 A |
highest frequency band | ULTRA high frequency band |
MRF372D | MRF372 | |
---|---|---|
Description | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
Number of terminals | 4 | 4 |
surface mount | Yes | YES |
Terminal form | FLAT | FLAT |
Terminal location | pair | DUAL |
Shell connection | source | SOURCE |
Number of components | 1 | 1 |
transistor applications | amplifier | AMPLIFIER |
Transistor component materials | silicon | SILICON |
highest frequency band | ULTRA high frequency band | ULTRA HIGH FREQUENCY BAND |