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MRF372D

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size543KB,13 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MRF372D Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

MRF372D Parametric

Parameter NameAttribute value
Number of terminals4
Minimum breakdown voltage68 V
Processing package descriptionROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
surface mountYes
Terminal formFLAT
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsCeramic, Metal-SEALED COFIRED
structuresingle
Shell connectionsource
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeRF power
Maximum leakage current17 A
highest frequency bandULTRA high frequency band

MRF372D Related Products

MRF372D MRF372
Description UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Number of terminals 4 4
surface mount Yes YES
Terminal form FLAT FLAT
Terminal location pair DUAL
Shell connection source SOURCE
Number of components 1 1
transistor applications amplifier AMPLIFIER
Transistor component materials silicon SILICON
highest frequency band ULTRA high frequency band ULTRA HIGH FREQUENCY BAND

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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