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NAND08GR4B2CZL6E

Description
512M X 8 FLASH 3V PROM, 25000 ns, PDSO48
Categorystorage    storage   
File Size2MB,69 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
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NAND08GR4B2CZL6E Overview

512M X 8 FLASH 3V PROM, 25000 ns, PDSO48

NAND08GR4B2CZL6E Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeLGA
package instructionVBGA,
Contacts52
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time25000 ns
JESD-30 codeR-PBGA-B52
length17 mm
memory density4294967296 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals52
word count536870912 words
character code512000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512MX8
Package body materialPLASTIC/EPOXY
encapsulated codeVBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE
Parallel/SerialPARALLEL
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height0.65 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
typeSLC NAND TYPE
width12 mm

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