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NAND04GW3B2DZL6E

Description
512M X 8 FLASH 3V PROM, 25000 ns, PDSO48
Categorystorage    storage   
File Size2MB,69 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
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NAND04GW3B2DZL6E Overview

512M X 8 FLASH 3V PROM, 25000 ns, PDSO48

NAND04GW3B2DZL6E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeLGA
package instructionVBGA, LGA52(UNSPEC)
Contacts52
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time25000 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B52
length17 mm
memory density4294967296 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size4K
Number of terminals52
word count536870912 words
character code512000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512MX8
Package body materialPLASTIC/EPOXY
encapsulated codeVBGA
Encapsulate equivalent codeLGA52(UNSPEC)
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE
page size2K words
Parallel/SerialPARALLEL
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height0.65 mm
Department size128K
Maximum standby current0.00005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
switch bitNO
typeSLC NAND TYPE
width12 mm

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