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NAND04GR3B4CZL6E

Description
512M X 8 FLASH 3V PROM, 25000 ns, PDSO48
Categorystorage   
File Size2MB,69 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

NAND04GR3B4CZL6E Overview

512M X 8 FLASH 3V PROM, 25000 ns, PDSO48

NAND04GR3B4CZL6E Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals48
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Rated supply voltage3 V
Minimum supply/operating voltage2.7 V
Maximum supply/operating voltage3.6 V
Processing package description12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
stateTransferred
ypeNAND TYPE
sub_categoryFlash Memories
ccess_time_max25000 ns
command_user_interfaceYES
data_pollingNO
jesd_30_codeR-PDSO-G48
storage density4.29E9 bit
Memory IC typeFLASH
memory width8
umber_of_sectors_size4K
Number of digits5.37E8 words
Number of digits512M
operating modeASYNCHRONOUS
organize512MX8
Packaging MaterialsPLASTIC/EPOXY
ckage_codeTSSOP
ckage_equivalence_codeTSSOP48,.8,20
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
ge_size__words_2K
serial parallelPARALLEL
wer_supplies__v_3/3.3
gramming_voltage__v_3
qualification_statusCOMMERCIAL
eady_busyYES
seated_height_max1.2 mm
sector_size__words_128K
standby_current_max5.00E-5 Amp
Maximum supply voltage0.0300 Amp
surface mountYES
CraftsmanshipCMOS
Temperature levelINDUSTRIAL
terminal coatingNOT SPECIFIED
Terminal formGULL WING
Terminal spacing0.5000 mm
Terminal locationDUAL
ggle_biNO
length18.4 mm
width12 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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