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NAND01GR4B2BN1E

Description
128M X 8 FLASH 1.8V PROM, 25000 ns, PBGA63
Categorystorage    storage   
File Size1MB,60 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

NAND01GR4B2BN1E Overview

128M X 8 FLASH 1.8V PROM, 25000 ns, PBGA63

NAND01GR4B2BN1E Parametric

Parameter NameAttribute value
Parts packaging codeTSOP
package instruction12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time25000 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee3/e6
length18.4 mm
memory density1073741824 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN/TIN BISMUTH
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12 mm
Base Number Matches1

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