SDF11N90GAFXGSB datasheet, PDF

SDF11N90GAFXGSB: DescriptionPower Field-Effect Transistor, 11A I(D), 900V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size64KB，1 Pages; ManufacturerSolitron Devices Inc.

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SDF11N90GAFXGSB Overview

Power Field-Effect Transistor, 11A I(D), 900V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, R-MSFM-T3
Reach Compliance Code	unknown
Other features	CUSTOM BENT LEAD OPTIONS ARE AVAILABLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (ID)	11 A
Maximum drain-source on-resistance	0.95 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-MSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	300 W
Maximum pulsed drain current (IDM)	44 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Maximum off time (toff)	325 ns
Maximum opening time (tons)	210 ns
Base Number Matches	1

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