ER3E datasheet, PDF - EEWORLD Datasheet

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ER3E: Description3 A, SILICON, RECTIFIER DIODE, DO-214AB; CategoryDiscrete semiconductor diode; File Size46KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER3E Overview

3 A, SILICON, RECTIFIER DIODE, DO-214AB

ER3E Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	DO-214AB
package instruction	ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	METALLURGICALLY BONDED
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	300 V
Maximum reverse recovery time	0.035 µs
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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DATA SHEET

ER3A~ER3J

SURFACE MOUNT RECTIFIER

VOLTAGE

FEATURES

• For surface mounted applications

.128(3.25)

.108(2.75)

.245(6.22)

.220(5.59)

50 to 600 Volts

CURRENT

3.0 Amperes

SMC/DO-214AB

Unit: inch (mm)

• High temperature metallurgically bonded-no compression

contacts as found in other diode-constructed rectifiers

• Glass passivated junction

• Built-in strain relief

• Easy pick and place

• Plastic package has Underwriters Laboratory Flammability

Classification 94V-O

•

Both normal and Pb free product are available :

.280(7.11)

.260(6.60)

.012(.305)

.006(.152)

Normal : 80~95% Sn, 5~20% Pb

Pb free: 98.5% Sn above

.103(2.62)

.079(2.00)

.050(1.27)

.030(0.76)

.320(8.13)

.305(7.75)

MECHANICALDATA

Case: JEDEC DO-214AB molded plastic

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Indicated by cathode band

Standard packaging: 16mm tape (EIA-481)

Weight: 0.007 ounce, 0.21 gram

.008(.203)

.002(.051)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

P A R A M E TE R

M a xi um R e curre nt P e a k R e ve rse V o l a g e

M a xi um R M S V o l a g e

M a xi um D C B l cki g V o l a g e

M a xi um A ve ra g e F o rw a rd C urre nt . 7 5 "(9 . m m )

l a d l ng t a t T

= 7 5

P e a k F o rw a rd S urg e C urre nt : 8 . m s si g l ha l si e -w a ve

n e

f n

sup e ri p o se d o n ra t d l a d (JE D E C m e t o d )

e o

M a xi um F o rw a rd V o l a g e a t 3 . A

M a xi um D C R e ve rse C urre nt T

= 2 5

a t R a t d D C B l cki g V o l a g e T

= 1 0 0

M a xi um R e ve rse R e co ve ry Ti e (N o t 1 )

Typ i a l Junct o n ca p a ci a nce (N o t 2 )

M a xi um t e rm a l R e si t nce (N o t 3 )

O p e ra t ng a nd S t ra g e Te m p e ra t re R a ng e

S YM B O L

RRM

RM S

R R

S TG

0. 5

200

-5 0 T O + 1 5 0

E R 3A

E R 3B

100

E R 3C

150

105

150

E R 3D

200

140

200

100

E R 3E

300

210

300

E R 3G

400

280

400

E R 3J

600

420

600

UNI S

1. 5

C /W

NOTES:1. Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

2. Measured at 1 MHz and applied V

= 4.0 volts.

3. 8.0 mm

( .013mm thick ) land areas.

STAD-MAR.10.2004

PAGE . 1

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